We present results on a monolithic semiconductor-based master-oscillator power amplifier (MOPA) combining a distributed-feedback (DFB) laser and a tapered amplifier on a single chip. The MOPA reaches an output power of almost 12 W at an emission wavelength around 1064 nm in continuous-wave operation. Pulses with a length of around 100 ps can be obtained either by injecting nanosecond current pulses into the tapered amplifier alone or into both the DFB laser and the tapered amplifier. In the latter case, pulses with a width of 84 ps, a peak power of 42 W, and a spectral width of 160 pm are generated.
A GaN-HEMT-based circuit is presented capable of switching 20 A of current with less than about 0.5 ns rise and fall time. This demonstrates the potential of GaN transistors for high current switching applications, even if breakdown voltage re quirements are low. The current driver is used to realize an opti cal pulse picker generating 10 ps optical pulses of more than 30 W with a variable repetition rate between 1 kHz and 100 MHz.
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