Laser driver switching 20 A with 2 ns pulse width using GaN

Liero, A.; Klehr, A.; Schwertfeger, S.; Hoffmann, Th.; Heinrich, W.

doi:10.1109/mwsym.2010.5517952

Cited by 20 publications

(13 citation statements)

References 6 publications

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“…Pulse amplitude Im and duration tW determined by the circuit -The current amplitude for shorter pulses is always smaller, even for an ideal switch, due to growth in the characteristic LC circuit impedance ρ = (LP/C0) 1/2 (see formulas (1) and (2) and dashed lines in Fig.3). The reduction in the measured current amplitude for shorter pulses is more significant than that determined by the circuit, however.…”

Section: Results and Discussion Iii1 Effect Of The Circuit Anmentioning

confidence: 99%

“…Fairly powerful is the competition from 20A/2ns [27] and from the especially impressive sub-nanosecond 25-30A [28] GaN FET-based drivers. They definitely surpass Si avalanche drivers in having a higher repetition rate, but should lose out in the simplicity of assembly (including the realization of low inductance), miniaturization, the expected price of a transmitter, and the compactness of the electronics driving the transmitter (a Si ABJT can be triggered by a pulse of only ~20 mA, while the requirements for controlling a GaN driver are very strict).…”

Section: Suppression Of Relaxation Oscillations: Importance and Specimentioning

confidence: 99%

“…The-state-of-the-art in long-distance near-infrared optical radars is the use of laser-diode-based miniature pulsed transmitters producing optical pulses of 3-10 ns in duration and peak power typically below 40W. A number of recent commercial applications have stimulated a growing demand for generating current pulses of 1-2 nanoseconds in length [1] or shorter with an amplitude of ~10-10 2 A across a low-ohmic load. This concerns particularly the pumping of high-power broad-stripe laser diodes pulsed optical radars (lidars) and other systems [2,3].…”

Section: Introductionmentioning

confidence: 99%

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Miniature High-Power Nanosecond Laser Diode Transmitters Using the Simplest Possible Avalanche Drivers

Vainshtein

Zemlyakov

Егоркин

et al. 2019

IEEE Trans. Power Electron.

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The-state-of-the-art in long-distance near-infrared optical radars is the use of laser-diodebased miniature pulsed transmitters producing optical pulses of 3-10 ns in duration and peak power typically below 40W. The duration of the transmitted optical pulses becomes a bottleneck in the task of improving the radar ranging precision, particularly due to the progress made in developing single photon avalanche detectors (SPADs). The speed of miniature highcurrent drivers is limited by the speed of the semiconductor switch, either a gallium nitride (GaN) field-effect transistor, the most popular alternative nowadays, or a silicon avalanche bipolar junction transistor (ABJT), which was traditional in the past. Recent progress in the physical understanding of peculiar 3-D transients promises further enhancement in speed and efficiency of properly modified ABJTs, but that is not the only factor limiting the transmitter speed. We show here that a low-inductance miniature transmitter assembly containing only a specially developed capacitor, a more advanced transistor chip than that used in commercial ABJTs and a laser diode has allowed peak power from 40 to 180 W to be reached in optical pulses of 1-2 ns in duration without afterpulsing relaxation oscillations. This finding is of interest for compact low-cost, long-distance decimetreprecision lidars, particularly for automotive applications.

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Section: Results and Discussion Iii1 Effect Of The Circuit Anmentioning

confidence: 99%

Section: Suppression Of Relaxation Oscillations: Importance and Specimentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Miniature High-Power Nanosecond Laser Diode Transmitters Using the Simplest Possible Avalanche Drivers

Vainshtein

Zemlyakov

Егоркин

et al. 2019

IEEE Trans. Power Electron.

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“…For measurements under pulsed operation an in-house developed electrical driver circuit (see Fig. 2a), as described by Liero et al [13], was triggered with the delay generator DG 645. The amplifier was temperature stabilized.…”

Section: Laser Layout and Experimental Set-upmentioning

confidence: 99%

Generation of spectrally-stable continuous-wave emission and ns pulses at 800 nm and 975 nm with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier

Klehr

Wenzel

Fricke

et al. 2015

Novel in-Plane Semiconductor Lasers XIV

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Semiconductor based sources which emit high-power spectrally stable nearly diffraction-limited optical pulses in the nanosecond range are ideally suited for a lot of applications, such as free-space communications, metrology, material processing, seed lasers for fiber or solid state lasers, spectroscopy, LIDAR and frequency doubling.Detailed experimental investigations of 975 nm and 800 nm diode lasers based on master oscillator power amplifier (MOPA) light sources are presented. The MOPA systems consist of distributed Bragg reflector lasers (DBR) as master oscillators driven by a constant current and ridge waveguide power amplifiers which can be driven DC and by current pulses.In pulse regime the amplifiers modulated with rectangular current pulses of about 5 ns width and a repetition frequency of 200 kHz act as optical gates, converting the continuous wave (CW) input beam emitted by the DBR lasers into a train of short optical pulses which are amplified. With these experimental MOPA arrangements no relaxation oscillations in the pulse power occur. With a seed power of about 5 mW at a wavelength of 973 nm output powers behind the amplifier of about 1 W under DC injection and 4 W under pulsed operation, corresponding to amplification factors of 200 (amplifier gain 23 dB) and 800 (gain 29 dB) respectively, are reached. At 800 nm a CW power of 1 W is obtained for a seed power of 40 mW. The optical spectra of the emission of the amplifiers exhibit a single peak at a constant wavelength with a line width < 10 pm in the whole investigated current ranges. The ratios between laser and ASE levels were > 50 dB. The output beams are nearly diffraction limited with beam propagation ratios M 2 lat ~ 1.1 and M 2 ver ~ 1.2 up to 4 W pulse power.

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“…For the amplification and control of the nanosecond current pulses an electronic circuit containing a high-frequency GaN transistor was developed. Details of the pulsed diode laser driver can be found in [7].…”

mentioning

confidence: 99%

High peak-power nanosecond pulses generated with DFB RW laser

et al. 2011

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The generation of optical pulses with very high-peak power by gainswitching of a distributed-feedback (DFB) ridge-waveguide (RW) laser emitting at a wavelength of 1064 nm is demonstrated. With 4 ns-long pulses a peak power of 2.6 W is achieved at a repetition frequency of 250 kHz. The rise and fall times of the pulses are about 1.2 ns. The spectral full width at half maximum ranges between 30 and 40 pm for all powers, whereas the width enclosing 95% of the intensity increases from 90 to 450 pm from low to high power. The laser has a cavity length of 1 mm.Introduction: High-power diode lasers capable of generating spectrally stable nearly diffraction-limited optical pulses in the nanosecond range can be used in a variety of applications including free-space communications, metrology, material processing and frequency doubling. Gain switching, i.e. turning on and off the current injected into the active section of a diode laser, offers a simple, cost-effective and powerefficient possibility to generate optical pulses. Diffraction-limited emission is achieved by a proper design of the laser waveguide, so that only the fundamental transverse mode lases. Spectral stabilisation can be realised with Bragg gratings either in an external cavity configuration or integrated into the semiconductor chip. Both methods have their advantages and disadvantages. For example, internal Bragg gratings necessitate a more sophisticated chip technology. On the other hand, lasers with external Bragg gratings suffer from the long external round-trip time, such that during the onset of the pulse the spectral stabilisation fails. In [1] a slab-coupled optical waveguide laser emitting at 965 nm is reported, which is spectrally stabilised with an external fibre Bragg grating. A fibre-coupled power of 1.6 W (2.4 W emitted by the laser) was obtained with 35 ns-long pulses. The spectral full width at half maximum (FWHM) was 0.2 nm. A cavity as long as 5 mm was used. Lasers with Bragg gratings integrated into the chip can be realised either in a distributed Bragg reflector (DBR) or in a distributed feedback (DFB) configuration. DBR ridge-waveguide lasers emitting at 976 and 1064 nm were reported in [2] to generate optical pulses with pulse lengths between 4 and 48 ns. Stable pulses with a maximum peak power of 600 mW were obtained. In [3], a 1.8 mmlong DFB ridge-waveguide laser emitting at 976 nm having lateral Bragg gratings was used to generate 50 ns-long optical pulses with a peak power of 1.6 W. In this Letter, we demonstrate the generation of 4 ns-long optical pulses with a peak power of about 2.6 W at a repetition frequency of 250 kHz with a 1 mm-long DFB laser emitting at 1064 nm.

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Laser driver switching 20 A with 2 ns pulse width using GaN

Cited by 20 publications

References 6 publications

Miniature High-Power Nanosecond Laser Diode Transmitters Using the Simplest Possible Avalanche Drivers

Miniature High-Power Nanosecond Laser Diode Transmitters Using the Simplest Possible Avalanche Drivers

Generation of spectrally-stable continuous-wave emission and ns pulses at 800 nm and 975 nm with a peak power of 4 W using a distributed Bragg reflector laser and a ridge-waveguide power amplifier

High peak-power nanosecond pulses generated with DFB RW laser

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