High-power InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system

Wilk, A.; Kovsh, A. R.; Mikhrin, S.; Chaix, C.; Novikov, I. I.; Maximov, M. V.; Shernyakov, Yu. M.; Ustinov, V. M.; Ledentsov, N. N.

doi:10.1016/j.jcrysgro.2005.01.040

Cited by 33 publications

(16 citation statements)

References 15 publications

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“…In this direction, active materials based on zero-dimensional quantum dots (QDs) revealed to be very promising, thanks to the quantization of their electronic spectrum which enhances the density of available states near the edges of conduction and valence bands and inhibits thermal depopulation of the lasing levels [1,2]. Epitaxially grown QDs have been extensively studied [3][4][5], leading to the fabrication of high performing laser diodes mostly based on Stranski-Krastanov self-organized In(Ga)As QDs.…”

Section: Introductionmentioning

confidence: 99%

Lithographic nano-patterning of colloidal nanocrystal emitters for the fabrication of waveguide photonic devices

Martiradonna¹,

Qualtieri²,

Stomeo³

et al. 2007

Sensors and Actuators B: Chemical

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Section: Introductionmentioning

confidence: 99%

Lithographic nano-patterning of colloidal nanocrystal emitters for the fabrication of waveguide photonic devices

Martiradonna¹,

Qualtieri²,

Stomeo³

et al. 2007

Sensors and Actuators B: Chemical

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“…Threshold current density of 190 A/cm 2 and high differential quantum efficiency of 70% were obtained at room temperature. These excellent values in addition to good I-V characteristics (1.1 V turn on voltage and series resistance as low as 2 · 10 -4 Wcm 2 ) led to record continuous wave (CW) output power of 4.2 W for broad area devices (100 lm wide, 1600 lm long) [67].…”

Section: Quantum Dot Lasersmentioning

confidence: 95%

Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy

Henini

2006

Nanoscale Res Lett

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One of the main directions of contemporary semiconductor physics is the production and study of structures with a dimension less than two: quantum wires and quantum dots, in order to realize novel devices that make use of low-dimensional confinement effects. One of the promising fabrication methods is to use selforganized three-dimensional (3D) structures, such as 3D coherent islands, which are often formed during the initial stage of heteroepitaxial growth in lattice-mismatched systems. This article is intended to convey the flavour of the subject by focussing on the structural, optical and electronic properties and device applications of self-assembled quantum dots and to give an elementary introduction to some of the essential characteristics.

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“…In the last couple of years it could be demonstrated that quantum dot (QD) lasers are suitable for high power applications [1][2][3]. However, quantum dot active zones enable much more flexibility in tailoring gain properties due to additional free geometrical parameters, like dot density, dot size and size distribution [4,5].…”

Section: Introductionmentioning

confidence: 99%

Wavelength stabilized quantum dot lasers for high power applications

Pavelescu

Reithmaier

Kaiser

et al. 2009

Physica Status Solidi (b)

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GaInAs/GaAs quantum dot lasers were developed with emission wavelengths of about 920 nm for high power high brightness applications. The laser structure and active dot layer was engineered in a way which allow a record‐low value of the temperature dependence of the emission wavelength with a temperature coefficient of 0.08 nm/K, i.e., about 4 times lower than quantum well lasers. Tapered lasers were fabricated with single lobe output in cw of more than 3 W. By additional distributed Bragg gratings, single mode output powers with >45 dB sidemode suppression and more than 1 W in cw could be obtained, which allow a stable single mode operation between 15–80 °C. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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High-power InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system

Cited by 33 publications

References 15 publications

Lithographic nano-patterning of colloidal nanocrystal emitters for the fabrication of waveguide photonic devices

Lithographic nano-patterning of colloidal nanocrystal emitters for the fabrication of waveguide photonic devices

Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy

Wavelength stabilized quantum dot lasers for high power applications

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