Wavelength stabilized quantum dot lasers for high power applications

Abstract

GaInAs/GaAs quantum dot lasers were developed with emission wavelengths of about 920 nm for high power high brightness applications. The laser structure and active dot layer was engineered in a way which allow a record‐low value of the temperature dependence of the emission wavelength with a temperature coefficient of 0.08 nm/K, i.e., about 4 times lower than quantum well lasers. Tapered lasers were fabricated with single lobe output in cw of more than 3 W. By additional distributed Bragg gratings, single mode output powers with >45 dB sidemode suppression and more than 1 W in cw could be obtained, which allow a stable single mode operation between 15–80 °C. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)