High power COD-free operation of 0.98 µm InGaAs/GaAs/InGaP lasers with non-injection regions near the facets

Cheng

et al. 2007

High power laser diodes and diode arrays emitting at the wavelength of 808nm are widely used for pumping neodymium (Nd+) doped solid state lasers and fiber lasers, medical surgery, dental treatment and material processing. In general, the power is limited by catastrophic optical mirror damage (COMD) and heat dissipation. In this paper we demonstrate 29W CW output power at 808 nm from a 400 µm single emitter with 2mm cavity length. The device thermally rolls over due to the excess heat. The L-I curve rolls over at 29.5W, the laser is still alive, and we can repeat the test again and again without catastrophic optical mirror-damage (COMD). The device consists of an InAlGaAs/AlGaAs/GaAs, optimized special graded-index separated-confinement heterostructure (GRINSCH) broad waveguide (BW), single quantum well (SQW) and barriers between waveguide and cladding layers. A weak temperature dependence characteristic, which is desirable for high power and reliable operation, is obtained from these devices.

Section: Device Characterizationmentioning

confidence: 99%

High-power highly reliable single emitter laser diodes at 808 nm

Cheng

et al. 2007

“…Oxidation of the facets in laser diodes made from aluminum-containing materials has been shown to be the major contributor to the non-radiative recombination process [14,17]. Techniques such as adding passivation layers to protect facets [18], cleaving and coating facets in high vacuum [18], creating non-absorbing windows close to the facets [19] have been implemented to reduce COMD. The COD failure mode can be revealed by the destructive techniques of chemical etching and plane-view electron-beam induced current (EBIC) imaging.…”

Section: Device Reliabilitymentioning

confidence: 99%

High power high brightness single emitter laser diodes at Axcel Photonics

Cheng

et al. 2008

High power, high brightness, single emitter laser diodes with different apertures from 5 µm to 1000 µm are reported on, in the wavelength range from 780 nm to 1060 nm. On going progress at Axcel Photonics for both singlemode and multi-mode laser diodes will be presented. These diode lasers show high slope efficiency, low threshold current and low voltage, etc. Laser diodes with different emitting apertures at 5µm, 50 µm, 90 µm, 200 µm, 400 µm, 1000 µm, are reported on and discussed in detail. The reliability data for different sized emitters is presented. These results demonstrated that Axcel's technologies enable laser diodes made from Al based material grown on GaAs substrates, which can reliably operate at high brightness and high power in the near infrared-wavelength range under wide range of emitting apertures. These laser diodes are suitable for a wide variety of applications including medical, material processing, graphics, pumping solid-state lasers and fiber lasers.

“…Oxidation of the facets of laser diodes made from aluminum-containgin materials has been shown to be the major contributor to the non-radiative recombination process [17,21]. Techniques such as adding passivation layers to protect facets [22], cleaving and coating facets in high vacuum [22], creating non-absorbing windows close to the facets [23] have been implemented to reduce COMD. Since the active layer in our 915 nm laser diodes is AlGaInAs, a Al-containing material, the reliability of these devices are of concern.…”

Section: Device Reliabilitymentioning

confidence: 99%

High-power single-mode 915-nm, InAlGaAs quantum-well lasers grown by MOCVD

Nelson

et al. 2003

We report results on single-mode, InAlGaAs/AlGaAs/GaAs, 915 nm, laser-diodes operating reliably at 300 mW. The graded-index, separate-confinement, strained, single quantum-well structure was grown by metal-organic chemicalvapor deposition. Carbon, rather than zinc, was used as the p-doping source to reduce internal loss and potential reliability issues due to the thermal diffusion of zinc. A threshold current density of 133 A/cm 2 , internal loss of 2.0 cm -1 and internal quantum efficiency of 93% were achieved. For 1500 µm long ridge waveguide lasers, a record single-mode output-power of 500mW was obtained for devices mounted epitaxial-side up onto AlN submounts using eutectic Au 80 Sn 20 solder. Ten burned-in devices have now been aged at a constant current of 450 mA (~ 300 mW) at 85 ºC for more than 1500 hours without measurable degradation.