High-power single-mode 915-nm, InAlGaAs quantum-well lasers grown by MOCVD

Abstract

We report results on single-mode, InAlGaAs/AlGaAs/GaAs, 915 nm, laser-diodes operating reliably at 300 mW. The graded-index, separate-confinement, strained, single quantum-well structure was grown by metal-organic chemicalvapor deposition. Carbon, rather than zinc, was used as the p-doping source to reduce internal loss and potential reliability issues due to the thermal diffusion of zinc. A threshold current density of 133 A/cm 2 , internal loss of 2.0 cm -1 and internal quantum efficiency of 93% were achieved. For 1500 µm long ridge waveguide lasers, a record single-mode output-power of 500mW was obtained for devices mounted epitaxial-side up onto AlN submounts using eutectic Au 80 Sn 20 solder. Ten burned-in devices have now been aged at a constant current of 450 mA (~ 300 mW) at 85 ºC for more than 1500 hours without measurable degradation.

High-power highly reliable single emitter laser diodes at 808 nm

“…Several methods have been successfully incorporated to both increase the initial COD limit and to minimize its decrease as the device is operated. These methods are the use of aluminum-free materials either in the active layer or in the waveguide layers [3] , the use of a window region at the facets that is transparent at the lasing wavelength non-absorbing mirror [4] , and the use of a passivation layer that limits chemical reactions or point-defect migration [5] . Increasing cavity length also improves the COD limit as well as the long-term reliability.…”