High power high brightness single emitter laser diodes at Axcel Photonics

Abstract

High power, high brightness, single emitter laser diodes with different apertures from 5 µm to 1000 µm are reported on, in the wavelength range from 780 nm to 1060 nm. On going progress at Axcel Photonics for both singlemode and multi-mode laser diodes will be presented. These diode lasers show high slope efficiency, low threshold current and low voltage, etc. Laser diodes with different emitting apertures at 5µm, 50 µm, 90 µm, 200 µm, 400 µm, 1000 µm, are reported on and discussed in detail. The reliability data for different sized emitters is presented. These results demonstrated that Axcel's technologies enable laser diodes made from Al based material grown on GaAs substrates, which can reliably operate at high brightness and high power in the near infrared-wavelength range under wide range of emitting apertures. These laser diodes are suitable for a wide variety of applications including medical, material processing, graphics, pumping solid-state lasers and fiber lasers.

Design and analysis of high-temperature operating 795 nm VCSELs for chip-scale atomic clocks

“…InAlGaAs/AlGaAs QWs have been widely employed for lasers emitting at about 0.8 µm and demonstrated superior gain characteristics with respect to unstrained GaAs/AlGaAs QWs [18,[25][26][27]. Therefore, we choose three InAlGaAs QWs separated by Al 0.3 GaAs barriers to form the active region of the 795 nm VCSEL structure in figure 1.…”