High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE)

Liu, J.P.; Huang, Dayu; Li, J.P.; Sun, Dawei; Kong, Meiying

doi:10.1016/s0022-0248(98)01396-7

Cited by 3 publications

(1 citation statement)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This, in turn, influences the Si͑001͒:P film growth rate 2,3 and induces surface roughening. 4,5 The observed decrease in growth rate and the onset of surface roughening are directly related to the presence of P at the growth surface. Thus, quantitative measurements of the P surface coverage P as a function of deposition conditions, which include incident precursor fluxes and film growth temperature T s , are essential for understanding the effects of P doping on the growth of epitaxial Si͑001͒ and for modeling P incorporation kinetics.…”

Section: Introductionmentioning

confidence: 95%

Phosphorus incorporation during Si(001):P gas-source molecular beam epitaxy: Effects on growth kinetics and surface morphology

Cho

Bareño

Foo

et al. 2008

Journal of Applied Physics

View full text Add to dashboard Cite

The effects of P doping on growth kinetics and surface morphological evolution during Si͑001͒:P gas-source molecular beam epitaxy from Si 2 H 6 and PH 3 at temperatures T s = 500-900°C have been investigated. With increasing PH 3 / Si 2 H 6 flux ratio J P/Si at constant T s , we observe a decrease in the film growth rate R and an increase in the incorporated P concentration C P , both of which tend toward saturation at high flux ratios, which is accompanied by increased surface roughening and pit formation. At constant J P/Si , R increases with increasing T s , while C P initially increases, reaches a maximum at T s = 700°C, and then decreases at higher growth temperatures. We use in situ isotopically tagged D 2 temperature programed desorption ͑TPD͒ to follow changes in film surface composition and dangling bond density db as a function of J P/Si and T s. Measurements are carried out on both as-deposited Si͑001͒:P layers and P-adsorbed Si͑001͒ surfaces revealing ␤ 1 and ␤ 2 peaks due to D 2 desorption from Si monohydride and dihydride species, respectively, as well as the formation of a third peak ␤ 3 corresponding to D 2 desorption from mixed Siu P dimers. Dissociative PH 3 adsorption on Si͑001͒ results in a decrease in db and an initial increase in P surface coverage P with increasing T s. Saturation P values reach a maximum of ϳ1 ML at T s = 550°C, and decrease with T s Ͼ 600°C due to the onset of P 2 desorption. Comparison of P ͑T s ͒ results obtained during film growth with postdeposition C P ͑T s ͒ results reveals the presence of strong P surface segregation. From measurements of P versus C P in Si͑001͒:P layers grown as a function of T s , we obtain a P segregation enthalpy ⌬H s = −0.86 eV. By using the combined set of results, we develop a predictive model for C P versus T s and, J P/Si incorporating the dependence of the PH 3 reactive sticking probability S PH 3 on P , which provides an excellent fit to the experimental data.

show abstract