In recent years, the demand for near-infrared
phosphor-converted
light-emitting diodes (NIR pc-LEDs) has increased rapidly, leading
to more and more attention being paid to the research of broad-band
near-infrared phosphors. In this work, Cr3+-doped Ca2LuScGa2Ge2O12 (CLSGG:Cr3+) phosphors with broad-band NIR emission were prepared through
traditional high-temperature solid-state reactions. The crystal structures
of the phosphors were analyzed by X-ray diffraction (XRD) and Rietveld
refinement. The photoluminescence excitation (PLE) spectra of the
synthesized CLSGG:Cr3+ phosphors exhibit a strong absorption
band in the 400–500 nm region, which matches well with a blue-light-emitting
chip. The photoluminescence (PL) spectra of the phosphors show broad-band
emission ranging from 650 to 1100 nm with a full width at half-maximum
(fwhm) of about 150 nm. At 423 K, the integrated emission intensity
of CLSGG:0.02Cr3+ is about 59% of that at room temperature.
A NIR pc-LED device was fabricated by combining a mixture of as-synthesized
CLSGG:0.02Cr3+ phosphor and silicone with a 460 nm blue-light-emitting
chip. Under a driving current of 100 mA, the output power of the device
can achieve 1.213 mW, indicating that the as-prepared phosphors are
promising for NIR pc-LED applications.
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