MBE growth kinetics of Si on heavily-doped Si(111):P: a self-surfactant effect

Fissel, A.; Richter, W.

doi:10.1016/s0921-5107(99)00460-2

Cited by 7 publications

(3 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Thus, we assign the core growth direction of the rectangular NWs to the same ⟨211⟩ direction of the hexagonal NWs and hypothesize that this morphology transformation results from an increase in the relative growth rate of {113} surfaces over the {111} and {110} surfaces due to presence of phosphine or some phosphorus species derived from phosphine. Phosphine has been shown to significantly alter the epitaxial growth of silicon in various ways, including a retardation of growth rate, , and we suggest that a similar process occurs here. Nonequivalent growth rates of different crystal surfaces have been exploited for morphology control of, for example, CdTe nanocrystals and Au nanorods .…”

supporting

confidence: 57%

Tuning Light Absorption in Core/Shell Silicon Nanowire Photovoltaic Devices through Morphological Design

et al. 2012

View full text Add to dashboard Cite

show abstract

supporting

confidence: 57%

Tuning Light Absorption in Core/Shell Silicon Nanowire Photovoltaic Devices through Morphological Design

et al. 2012

View full text Add to dashboard Cite

show abstract

“…There is some limited growth on the vertical sidewall that pinches off a certain volume, forming an amorphous pocket in the corner of the recess. There are some indications in the literature that P can poison a (1 1 1) growth surface [11] which could also contribute to a reduced growth rate along the surface. A proper recess shape (isotropic versus anisotropic etch, recess depth) and pre-epi surface treatment (e.g.…”

Section: Resultsmentioning

confidence: 99%

Highly tensile strained silicon–carbon alloys epitaxially grown into recessed source drain areas of NMOS devices

Bauer

Machkauotsan

Arena

2006

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Growth of high quality Si 1−y−z C y P z (SiCP) with high substitutional carbon levels has been demonstrated. Growth rates up to 82 nm min −1 (at 550 • C) led to films incorporating up to 3.6% substitutional carbon [C] VL according to Vegard's law (VL) or 2.8% [C] KB after Kelieres/Berti (KB). The films were fully strained with no sign of relaxation and displayed stress well above 2 GPa. Optionally, these films can be heavily doped with P, which then results in resistivities as low as 0.5 m cm. The α/epi growth rate ratio was optimized to 1. This high throughput SiCP epitaxial growth process is an excellent candidate to be combined with a selective etch process. Used with repeated deposition/etch cycles, the final result will be identical to a true selective epitaxial growth process, but without any loading effect on [C] or [P] due to the blanket deposition steps.

show abstract

“…5b). There are some indications in the literature, that P can poison a Si(111) growth surface and retard growth [6]. Therefore the recess shape (and the Si substrate surface orientation and channel direction) play a very important role.…”

Section: Resultsmentioning

confidence: 99%

Tensile Strained Selective Silicon Carbon Alloys for Recessed Source Drain Areas of Devices

2006

View full text Add to dashboard Cite

Si1-yCy films grown lattice matched into recessed source drain areas can produce a tensile strained Silicon channel, which in turn will enhance electron mobility. We demonstrate a Cyclical Deposition Etch (CDE) process that consists of a nonselective deposition, (epitaxial growth over the exposed crystalline Silicon areas of the source and drain and amorphous (a) or polycrystalline deposition over the dielectric areas) together with a subsequent selective removal of a-material from the insulator, with negligible removal of epitaxial material from source and drain areas. To make such an approach production worthy, two requirements are essential: 1) a high growth rate (GR) with a low a/epi GR ratio, and 2) a high etch rate (ER) with a high a/epi ER ratio. We focus on the integration and defect formation aspect of our CDE process on patterned substrates.

show abstract

MBE growth kinetics of Si on heavily-doped Si(111):P: a self-surfactant effect

Cited by 7 publications

References 22 publications

Tuning Light Absorption in Core/Shell Silicon Nanowire Photovoltaic Devices through Morphological Design

Tuning Light Absorption in Core/Shell Silicon Nanowire Photovoltaic Devices through Morphological Design

Highly tensile strained silicon–carbon alloys epitaxially grown into recessed source drain areas of NMOS devices

Tensile Strained Selective Silicon Carbon Alloys for Recessed Source Drain Areas of Devices

Contact Info

Product

Resources

About