2019
DOI: 10.1364/oe.27.037065
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High performance waveguide uni-travelling carrier photodiode grown by solid source molecular beam epitaxy

Abstract: The first waveguide coupled phosphide-based UTC photodiodes grown by Solid Source Molecular Beam Epitaxy (SSMBE) are reported in this paper. Metal Organic Vapour Phase Epitaxy (MOVPE) and Gas Source MBE (GSMBE) have long been the predominant growth techniques for the production of high quality InGaAsP materials. The use of SSMBE overcomes the major issue associated with the unintentional diffusion of zinc in MOVPE and gives the benefit of the superior control provided by MBE growth techniques without the costs… Show more

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Cited by 14 publications
(8 citation statements)
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“…3 (a), (d) and (g), saturation effects occurred for squared photocurrent values higher than approximately 10 mA 2 (corresponding to an optical input power to the UTC of around 14.5 dBm). These saturation effects originated in the UTC and are likely to be due to either thermal or space-charge effects [12]. The UTC was biased with a voltage of -2 V as lower voltages did not improve the transmission performance.…”
Section: B Backhaul Performance Resultsmentioning
confidence: 99%
“…3 (a), (d) and (g), saturation effects occurred for squared photocurrent values higher than approximately 10 mA 2 (corresponding to an optical input power to the UTC of around 14.5 dBm). These saturation effects originated in the UTC and are likely to be due to either thermal or space-charge effects [12]. The UTC was biased with a voltage of -2 V as lower voltages did not improve the transmission performance.…”
Section: B Backhaul Performance Resultsmentioning
confidence: 99%
“…The bandwidth can be further improved by engineering the design of the epitaxial layers, reducing the device size, and applying traveling wave electrodes to better balance between the bandwidth and the quantum efficiency. 49…”
Section: Resultsmentioning
confidence: 99%
“…The measured leakage current was below 100 nA at 1 V of negative bias and the responsivity was 0.16 A/W. Powers of 32 μW and 60 μW (with respective photocurrents of 10 mA and 13.5 mA) were measured at 250 GHz from one of these UTCs mounted in a 6 mm diameter Si lens [21]. The lower-thanexpected output powers have been attributed to inaccurate modelling parameters [22] which have now been refined by experimental measurement for this newer design.…”
Section: B Utc-pdsmentioning
confidence: 99%
“…Compared to vertically illuminated UTCs, waveguide integrated PDs have shown to ease the strong responsivity-bandwidth trade-off found in the former and have produced record output powers [20]. The UTC epitaxial structure -detailed in [21] -contains a 300 nm n-InP collection layer and a 300 nm n++-InGaAsP waveguide layer.…”
Section: B Utc-pdsmentioning
confidence: 99%