Low Dark Current 1.55 Micrometer InAs Quantum Dash Waveguide Photodiodes

Wan, Yating; Shang, Chen; Huang, Jian; Xie, Zhiyang; Jain, Aditya; Norman, Justin; Chen, Baile; Gossard, A. C.; Bowers, John E.

doi:10.1021/acsnano.9b09715

Cited by 16 publications

(3 citation statements)

References 52 publications

(86 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The average of this dark current is 11.48 pA or 1.84 µA• cm −2 , with a standard deviation of 4.49 pA or 0.72 µA• cm −2 . The dark current is very low for an integrated III-V photodiode [27,28], due to the larger bandgap of GaAs. Nevertheless, the dark current of the devices are on par or lower than that of commercial solutions [29].…”

Section: Resultsmentioning

confidence: 99%

Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride waveguides for near-infrared applications

Goyvaerts¹,

Kumari²,

Uvin³

et al. 2020

Opt. Express

View full text Add to dashboard Cite

We demonstrate waveguide-detector coupling through the integration of GaAs p-in photodiodes (PDs) on top of silicon nitride grating couplers (GCs) by means of transfer-printing. Both single device and arrayed printing is demonstrated. The photodiodes exhibit dark currents below 20 pA and waveguide-referred responsivities of up to 0.30 A/W at 2V reverse bias, corresponding to an external quantum efficiency of 47% at 860 nm. We have integrated the detectors on top of a 10-channel on-chip arrayed waveguide grating (AWG) spectrometer, made in the commercially available imec BioPIX-300 nm platform.

show abstract

Section: Resultsmentioning

confidence: 99%

Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride waveguides for near-infrared applications

Goyvaerts¹,

Kumari²,

Uvin³

et al. 2020

Opt. Express

View full text Add to dashboard Cite

show abstract

“…Neither the asymmetric graded filter nor the trapping layers are unique to the GaAs-based material system. The analogies of such structures could be extended to other material systems, for example, the InAs/InP quantum dash system, where high performance broadband optical amplifiers, mode-locked lasers, superluminescent diodes, and photodetectors have been realized on a native InP substrate. Yet, the performance of the on-Si devices is less than ideal, possibly due to the insufficient reduction of the above-mentioned defects.…”

Section: Reliability Of Qd Lasers Epitaxially Grown On (001) Simentioning

confidence: 99%

Perspectives on Advances in Quantum Dot Lasers and Integration with Si Photonic Integrated Circuits

et al. 2021

Self Cite

View full text Add to dashboard Cite

Epitaxially grown quantum dot (QD) lasers are emerging as an economical approach to obtain on-chip light sources. Thanks to the three-dimensional confinement of carriers, QDs show greatly improved tolerance to defects and promise other advantages such as low transparency current density, high temperature operation, isolator-free operation, and enhanced four-wave-mixing. These material properties distinguish them from traditional III–V/Si quantum wells (QWs) and have spawned intense interest to explore a full set of photonic integration using epitaxial growth technology. We present here a summary of the most recent developments of QD lasers grown on a CMOS-compatible (001) Si substrate, with a focus on breakthroughs in long lifetime at elevated temperatures. Threading dislocations are significantly reduced to the level of 1 × 106 cm–2 via a novel asymmetric step-graded filter. Misfit dislocations are efficiently blocked from the QD region through well-engineered trapping layers. A record-breaking extrapolated lifetime of more than 200000 hours has been achieved at 80 °C, forecasting that device reliability is now entering the realm of commercial relevance and a monolithically integrated light source is finally on the horizon.

show abstract

“…Due to the lower lattice mismatch and bandgap difference compared to the InAs QD/GaAs system, InAs Qdashes can be grown larger with longer emission wavelengths. Thus, the InAs Qdash/InP system has been heavily studied for the technologically important C-band (1.55 μm) [ 13 – 15 ]. Placing the InAs Qdashes between InGaAs QWs (QDaWell) further weakens the quantum confinement effect, which finally enables 2-μm emission [ 16 ].…”

Section: Introductionmentioning

confidence: 99%

Punctuated growth of InAs quantum dashes-in-a-well for enhanced 2-μm emission

et al. 2023

View full text Add to dashboard Cite

InAs quantum dashes (Qdash) engineered to emit near 2 μm are envisioned to be promising quantum emitters for next-generation technologies in sensing and communications. In this study, we explore the effect of punctuated growth (PG) on the structure and optical properties of InP-based InAs Qdashes emitting near the 2-μm wavelength. Morphological analysis revealed that PG led to an improvement in in-plane size uniformity and increases in average height and height distribution. A 2 × boost in photoluminescence intensity was observed, which we attribute to improved lateral dimensions and structural stabilization. PG encouraged formation of taller Qdashes while photoluminescence measurements revealed a blue-shift in the peak wavelength. We proposed that the blue-shift originates from the thinner quantum well cap and decreased distance between the Qdash and InAlGaAs barrier. This study on the punctuated growth of large InAs Qdashes is a step toward realizing bright, tunable, and broadband sources for 2-μm communications, spectroscopy, and sensing.

show abstract

Low Dark Current 1.55 Micrometer InAs Quantum Dash Waveguide Photodiodes

Cited by 16 publications

References 52 publications

Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride waveguides for near-infrared applications

Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride waveguides for near-infrared applications

Perspectives on Advances in Quantum Dot Lasers and Integration with Si Photonic Integrated Circuits

Punctuated growth of InAs quantum dashes-in-a-well for enhanced 2-μm emission

Contact Info

Product

Resources

About