Punctuated growth of InAs quantum dashes-in-a-well for enhanced 2-μm emission

Chu, Rafael Jumar; Kim, Y.; Woo, Seungwan; Choi, Won Jun; Jung, Daehwan

doi:10.1186/s11671-023-03810-y

Cited by 3 publications

(3 citation statements)

References 40 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the orthogonal [110] direction (figure 9(d)), bond distortion between the dimer pairs could encourage easier aggregation orthogonal to the Qdash direction. Through engineering the size/shape of the dots and their surrounding cladding matrix, QD/Qdash lasers can access a wide range of wavelengths [61,62,[68][69][70]. Combining the QD/Qdash gain medium with optimized III-V/Si templates that exhibit low TD density, it becomes feasible to grow and fabricate diode lasers on Si ranging from 700 nm to 2 µm in wavelength (see figure 8).…”

Section: Quantum Dot and Quantum Dash Diode Lasers Grown On Simentioning

confidence: 99%

Recent progress in epitaxial growth of dislocation tolerant and dislocation free III–V lasers on silicon

Yan,

2024

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Epitaxial integration of III–V optical functionalities on silicon (Si) is the key to complement current Si photonics, facilitating the development of scalable, compact photonic integrated circuits. Here we aim to outline this field, focusing on the III–V semiconductor materials and the III–V lasers grown on Si. This paper is divided into two main parts: in the first part, we discuss III–V materials grown on Si, including the low-index {hhl} facets, (001) Si surface and anti-phase boundary, and dislocation engineering. The second part centres at III–V lasers grown on Si: we will first discuss III–V lasers that are highly tolerant to dislocations, including quantum dot/dash diode lasers, interband cascade, and quantum cascade lasers grown on Si from near infrared to long-wave infrared. We then move to the selective heteroepitaxy of low dislocation density III–Vs for the bufferless lasers. Finally, we review the III–V nanowire photonic crystal lasers grown on Si, which offers a different approach to overcome material mismatch and grow dislocation free III–V structures on silicon. We start with briefly introducing the recent progress of each technology, followed with a discussion of its key advantages, research challenge and opportunities.

show abstract

Section: Quantum Dot and Quantum Dash Diode Lasers Grown On Simentioning

confidence: 99%

Recent progress in epitaxial growth of dislocation tolerant and dislocation free III–V lasers on silicon

Yan,

2024

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…Details of the Qdash growth optimization are found elsewhere. 13,14 Figure 1b illustrates the conduction band alignment in the active region. The Qdash layers are separated by 40 nm InAlGaAs barriers.…”

Section: Epitaxial Growthmentioning

confidence: 99%

“…12 Furthermore, by depositing InAs in a punctuated growth strategy, the emission can be enhanced by almost 200%. 13 Here we present the epitaxial growth, device fabrication, and device testing of ridge waveguide lasers with InAs Qdashes as the active gain region. We show low threshold current of 131 A/cm 2 per Qdash layers emitting at 1.97 μm under pulsed mode conditions and characteristic temperature of 44 K under pulsed mode conditions.…”

Section: Introductionmentioning

confidence: 99%

InAs quantum dash lasers for 2-μm photonics

Chu,

Laryn,

Choi

et al. 2024

Novel in-Plane Semiconductor Lasers XXIII

View full text Add to dashboard Cite

The 2 μm spectral window is a host of a variety of applications in communication and sensing. However, the development of nanoscale emitters for this window has largely stagnated. Here, we present our growth, fabrication, and testing of InAs quantum dash (Qdash) lasers on InP for 2 μm photonics. The samples were grown by molecular beam epitaxy. Ridge waveguide lasers emitted at 1.97 μm, coinciding with the ground-state emission from the Qdash ensemble. A low threshold current density of 131 A/cm 2 per Qdash layer was calculated under pulsed mode conditions. Good thermal stability was observed up to 50 °C, with a characteristic temperature of 44 K. InAs Qdash on InP is promising 0D laser gain materials for 2 μm communication and sensing.

show abstract

Low-threshold 2 µm InAs/InP quantum dash lasers enabled by punctuated growth

Chu,

Laryn,

Ahn

et al. 2024

Opt. Express

View full text Add to dashboard Cite

2 µm photonics and optoelectronics is promising for potential applications such as optical communications, LiDAR, and chemical sensing. While the research on 2 µm detectors is on the rise, the development of InP-based 2 µm gain materials with 0D nanostructures is rather stalled. Here, we demonstrate low-threshold, continuous wave lasing at 2 µm wavelength from InAs quantum dash/InP lasers enabled by punctuated growth of the quantum structure. We demonstrate low threshold current densities from the 7.1 µm width ridge-waveguide lasers, with values of 657, 1183, and 1944 A/cm2 under short pulse wave (SPW), quasi-continuous wave (QCW), and continuous wave operation. The lasers also exhibited good thermal stability, with a characteristic temperature T0 of 43 K under SPW mode. The lasing spectra is centered at 1.97 µm, coinciding with the ground-state emission observed from photoluminescence studies. We believe that the InAs quantum dash/InP lasers emitting near 2 µm will be a key enabling technology for 2 µm communication and sensing.

show abstract

Punctuated growth of InAs quantum dashes-in-a-well for enhanced 2-μm emission

Cited by 3 publications

References 40 publications

Recent progress in epitaxial growth of dislocation tolerant and dislocation free III–V lasers on silicon

Recent progress in epitaxial growth of dislocation tolerant and dislocation free III–V lasers on silicon

InAs quantum dash lasers for 2-μm photonics

Low-threshold 2 µm InAs/InP quantum dash lasers enabled by punctuated growth

Contact Info

Product

Resources

About