Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride waveguides for near-infrared applications

Goyvaerts, Jeroen; Kumari, Sulakshna; Uvin, Sarah; Zhang, Jing; Baets, Roel; Gocalinska, Agnieszka; Pelucchi, E.; Corbett, Brian; Roelkens, Günther

doi:10.1364/oe.395796

Cited by 25 publications

(7 citation statements)

References 29 publications

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“…Combining the VCSEL with waveguide-coupled PIN PDs [37] makes for a compact, integrated and low-power consuming sensing platform on Silicon Nitride PICs. The PIN PDs are bottom illuminated by a diffraction grating coupler, and have a thick absorption layer to maximize absorption after vertical diffraction.…”

Section: H Gaas Vcsels and Pin Pds On Sin Picsmentioning

confidence: 99%

Micro-Transfer Printing for Heterogeneous Si Photonic Integrated Circuits

Roelkens

Zhang

Bogaert

et al. 2023

IEEE J. Select. Topics Quantum Electron.

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Silicon photonics (SiPh) is a disruptive technology in the field of integrated photonics and has experienced rapid development over the past two decades. Various high-performance Si and Ge/Si-based components have been developed on this platform that allow for complex photonic integrated circuits (PICs) with small footprint. These PICs have found use in a wide range of applications. Nevertheless, some non-native functions are still desired, despite the versatility of Si, to improve the overall performance of Si PICs and at the same time cut the cost of the eventual Si photonic system-on-chip. Heterogeneous integration is verified as an effective solution to address this issue, e.g. through die-wafer-bonding and flip-chip. In this paper, we discuss another technology, micro-transfer printing, for the integration of nonnative material films/opto-electronic components on SiPh-based platforms. This technology allows for efficient use of non-native materials and enables the (co-)integration of a wide range of materials/devices on wafer scale in a massively parallel way. In this paper we review some of the recent developments in the integration of non-native optical functions on Si photonic platforms using micro-transfer printing.

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Section: H Gaas Vcsels and Pin Pds On Sin Picsmentioning

confidence: 99%

Micro-Transfer Printing for Heterogeneous Si Photonic Integrated Circuits

Roelkens

Zhang

Bogaert

et al. 2023

IEEE J. Select. Topics Quantum Electron.

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“…Bolometers have improved from the iron rods initially used by Langley to materials with strong insulator-semiconductor transitions such as vanadium dioxide [40]. Photodiodes have improved from the helpful impurities in the occasional silicon ingot described by Ohl to epitaxial gallium arsenide (GaAs) [41], InSb [42], MCT [43], and superlattices [44]. Gone are the days of Shive's germanium phototransistors for IR detection; today, heterogeneous integration with silicon-based complementary metal oxide (CMOS) transistors are common [3].…”

Section: Materials Developmentmentioning

confidence: 99%

Solution-processable infrared photodetectors: Materials, device physics, and applications

Paramasivam

Vella

et al. 2021

Materials Science and Engineering: R: Reports

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This review is written to introduce infrared photon detectors based on solution-processable semiconductors. A new generation of solution-processable photon detectors have been reported in the past few decades based on colloidal quantum dots, two-dimensional materials, organics semiconductors, and perovskites. These materials offer sensitivity within the infrared spectral regions and the advantages of ease of fabrication at low temperature, tunable materials properties, mechanical flexibility, scalability to large areas, and compatibility with monolithic integration, rendering them as promising alternatives for infrared sensing when compared to vacuum-processed counterparts that require rigorous lattice matching during integration. This work focuses on infrared detection using disordered semiconductors so as to articulate how the inherent device physics and behaviors are different from conventional crystalline semiconductors. The performance of each material family is summarized in tables, and device designs unique to solution-processed materials, including narrowband photodetectors and pixel-less up-conversion imagers, are highlighted in application prototypes distinct from conventional infrared cameras. We share our perspectives in examining open challenges for the development of solution-processable infrared detectors and comment on recent research directions in our community to leverage the advantages of solutionprocessable materials and advance their implementation in next-generation infrared sensing and imaging applications.among many other areas. Commercially available IR detectors are predominantly based on vacuum-processed inorganic compound semiconductors, which are structurally rigid, brittle, and require fabrication via complex epitaxial growth and costly processes. A new generation of solution-processable semiconductors have been reported in the past few decades including colloidal quantum dots (CQDs) [1,8,9], organic semiconductors (OSCs) [4,7,10,11], perovskites [1,12,13], and two-dimensional (2D) materials [5,14]. These materials offer sensitivity within the IR spectral regions and the advantages of ease of fabrication

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“…When it comes to efficient co-integration on a package level, 3D-printed micro-lenses [83] or so-called photonic wire bonds [84,85] may open a path toward fully automated assembly of compact multi-chip systems with outstanding flexibility and performance. Similarly, options for efficiently implementing PDs on sensor PICs range from monolithic integration of germanium detectors on silicon photonic waveguides [86] to heterogeneous integration of III-V layers [80] and to transfer-printed III-V PDs [87]. The decision of the optimal light-source integration and system assembly concept heavily depends on the desired applications and in particular on the expected production volumes.…”

Section: Photonic System Assembly and Light-source Integrationmentioning

confidence: 99%

Integrated phase-sensitive photonic sensors: a system design tutorial

et al. 2021

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Photonic integration has seen tremendous progress over the previous decade, and several integration platforms have reached industrial maturity. This evolution has prepared the ground for miniaturized photonic sensors that lend themselves to efficient analysis of gaseous and liquid media, exploiting large interactions lengths of guided light with surrounding analytes, possibly mediated by chemically functionalized waveguide surfaces. Among the various sensor concepts, phase-sensitive approaches are particularly attractive: offering a flexible choice of the operation wavelength, these schemes are amenable to large-scale integration on mature technology platforms such as silicon photonics or silicon nitride ( S i 3 N 4 ) that have been developed in the context of tele- and data-communication applications. This paves the path toward miniaturized and robust sensor systems that offer outstanding scalability and that are perfectly suited for high-volume applications in life sciences, industrial process analytics, or consumer products. However, as the maturity of the underlying photonic integrated circuits (PICs) increases, system-level aspects of mass-deployable sensors gain importance. These aspects include, e.g., robust system concepts that can be operated outside controlled laboratory environments as well as readout schemes that can be implemented based on low-cost light sources, without the need for benchtop-type tunable lasers as typically used in scientific demonstrations. It is, thus, the goal of this tutorial to provide a holistic system model that allows us to better understand and to quantitatively benchmark the viability and performance of different phase-sensitive photonic sensor concepts under the stringent limitations of mass-deployable miniaturized systems. Specifically, we explain and formulate a generally applicable theoretical framework that allows for a quantitatively reliable end-to-end analysis of the overall signal chain. Building upon this framework, we identify and explain the most important technical parameters of the system, comprising the photonic sensor circuit, the light source, and the detector, as well as the readout and control scheme. We quantify and compare the achievable performance and the limitations that are associated with specific sensor structures based on Mach–Zehnder interferometers (MZIs) or high-Q optical ring resonators (RRs), and we condense our findings by formulating design guidelines both for sensor concepts. As a particularly attractive example, we discuss an MZI-based sensor implementation, relying on a vertical-cavity surface-emitting laser (VCSEL) as a power-efficient low-cost light source in combination with a simple and robust readout and control scheme. In contrast to RR-based sensor implementations, MZIs can be resilient to laser frequency noise, at the cost of a slightly lower sensitivity and a moderately increased footprint. To facilitate the application of our model, we provide a MATLAB-based application that visualizes the underlying physical principles and that can be readily used to estimate the achievable performance of a specific sensor system. The system-level design considerations are complemented by an overview of additional aspects that are important for successful sensor system implementation such as the design of the underlying waveguides, photonic system assembly concepts, and schemes for analyte handling.

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Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride waveguides for near-infrared applications

Cited by 25 publications

References 29 publications

Micro-Transfer Printing for Heterogeneous Si Photonic Integrated Circuits

Micro-Transfer Printing for Heterogeneous Si Photonic Integrated Circuits

Solution-processable infrared photodetectors: Materials, device physics, and applications

Integrated phase-sensitive photonic sensors: a system design tutorial

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