High performance tunnel injection quantum dot comb laser

Abstract

A high-speed multiwavelength quantum dot comb laser, grown by molecular beam epitaxy, is demonstrated. The device is characterized with a 75.9 nm (full width at half maximum) and a 91.4 nm (Δ−15 dB) wide lasing spectrum. There are 105 and 185 simultaneously emitted longitudinal modes with a maximum channel intensity nonuniformity of less than 3 dB in the spectral range of 1231–1252 nm and 1274–1311 nm, respectively, for a laser with 1040 μm cavity length. The channel spacing can be tuned with cavity length and remains invariant in the temperature range of 300–323 K. The small signal modulation bandwidth is 7.5 GHz.

Investigation of Chirped InAs/InGaAlAs/InP Quantum Dash Lasers as Broadband Emitters

“…This has been demonstrated by the self-assembled Qdot (Qdash) nano-structure devices in the O-(C-L-U) bands [1]- [4]. This wide spectrum generation is a stimulating technology finding applications in environmental monitoring (gas and bio sensors), metrology and spectroscopy, medical imaging [1], [2], [5], apart from their utilization as multiple wavelength source [6], comb source [7], in wavelength division multiplexed system, already demonstrated. Two classes of semiconductor broadband sources are identified based on the region of operation, namely, superluminescent diode (SLD), working in the amplified spontaneous emission region, and the broad inter-subband and inter-band (referred to as broadband hereafter) laser diodes, working in the stimulated emission region.…”

“…The other promising approach for chirping the emission energies of the Qdot/Qdash stacking layers in the multi-stack device structure is accomplished in various manners. For instance, varying the capping layer thickness or the spacer /barrier layer thickness [7], [12], [13], changing the amount of InAs deposition or conditions or both [14], [15], the position of the dot layer in the dot-in-well structure [16], hybrid Qdotquantum well (Qwell) [17]. In general, enhanced broad emission from both, SLDs (∼>100 nm) and lasers (∼ 75 nm) have been reported, in addition to high performance characteristics observed in the latter case.…”

Chirped InAs/InP quantum-dash laser with enhanced broad spectrum of stimulated emission

“…[6][7][8][9] In the short wavelength InAs/GaAs Qdot structures, a FWHM of $22 (75) nm with high power $0.5 (0.75) W, has been reported, employing standard (chirped) double-heterostructure design. [10][11][12] This enhancement in the lasing bandwidth offered by chirping forms a potentially viable platform, and the realization of such devices would offer compact, high-efficiency, and cost-effective solution in optical communications, medical imaging, metrology, and spectroscopy and sensing. 4,5 In this work, we investigated chirping on the multi-stack InAs/InP Qdash structure, which is accomplished by varying the AlGaInAs barrier layers.…”

Quantum dot lasers grown by gas source molecular-beam epitaxy

“…InAs quantum dots (QDs) have been extensively studied as the active material of high performance QD lasers [1][2][3][4]. Successful growth of InAs QD lasers has been achieved in variant techniques such as solid-state molecular-beam epitaxy (SSMBE) [5][6][7][8], metal organic vapor-phase epitaxy (MOVPE) [9][10][11][12][13], chemical-beam epitaxy [14], and gas source molecular-beam epitaxy (GSMBE) [15][16][17][18].…”