We report on the InAs quantum dots (QDs) laser in the 1.55μm wavelength region grown by gas source molecular-beam epitaxy. The active region of the laser structure consists of fivefold-stacked InAs QD layers embedded in the InGaAsP layer. Ridge waveguide lasers were processed and continuous-wave mode operation was achieved between 20 and 70°C, with characteristic temperature of 69K. High internal quantum efficiency (56%) and low infinite length threshold current density (128A∕cm2 per QD layer) was obtained for the as-cleaved devices at room temperature. The lasing wavelength range between 1.556 and 1.605μm can be covered by varying the laser cavity length.
We report on two-color InAs/InP(100) quantum dot lasers with tunable wavelength gap. Two peaks of lasing emission were observed simultaneously, while the high energy peak undergoes continuous blueshift with the increase in the injection current, and the low energy peak is somewhat fixed. Sophisticated studies of the wavelength gap as a function of the laser power prove that the two-peak lasing and shifting is not caused by the effect of Rabi oscillation. Moreover, comparison of electroluminescence and lasing spectra under different injection currents reveal the blueshift of the high energy peak is most likely related to the state-filling effect.
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