A spin-polarized vertical cavity surface emitting laser, with InAs∕GaAs self-organized quantum dots as the active gain media, has been fabricated and characterized. Electron spin injection is achieved via a MnAs∕GaAs Schottky tunnel contact. The laser is operated at 200K and, at this temperature, the degree of circular polarization in the output is 8% and the maximum threshold current reduction is 14%. These effects are not observed in identical control devices with nonmagnetic contacts.

The high-frequency dynamics of spin-polarized carriers and photons in a spin laser have been studied. The transient response of the device obtained from the rate equations is characterized by two sets of relaxation oscillations in the carrier and photon distributions corresponding to the two polarization modes. Consequently two distinct resonant peaks are observed in the small-signal modulation response. The calculated transient characteristics indicate that the best results are obtained from a spin laser when only the favored polarization mode, with lower threshold, is operational. Under this condition the small-signal modulation bandwidth is higher than that in a conventional laser, the threshold current is lower and the output polarization can be 100% with appropriate bias conditions, independent of the spin polarization of carriers in the active region. Measurements were made at 230 K on a InAs/GaAs quantum dot spin vertical cavity surface emitting laser. A time-averaged output polarization of 55% is measured with an active region spin polarization of 5 -6 %. The experimental results are in good agreement with calculated data.

The effects of spin-induced gain anisotropy on output polarization and threshold current reduction of electrically pumped spin-polarized lasers have been studied. Analytical forms of these parameters are derived by considering diffusive transport from the spin injector to the active region. The calculated values of the parameter are in excellent agreement with values obtained from measurements made at 200 K on an InAs/GaAs quantum dot spin-polarized vertical cavity surface-emitting laser. Electrical modulation of the output polarization of the laser is demonstrated with a peak modulation index of 0.6.

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The spin dynamics of dilute paramagnetic impurities embedded in a semiconductor GaAs channel of a conventional lateral spin valve has been investigated. It is observed that the electron spin of paramagnetic Mn atoms can be polarized electrically when driven by a spin valve in the antiparallel configuration. The transient current through the MnAs/GaAs/MnAs spin valve bears the signature of the underlying spin dynamics driven by the exchange interaction between the conduction band electrons in GaAs and the localized Mn electron spins. The time constant for this interaction is observed to be dependent on temperature and is estimated to be 80 ns at 15 K.

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A high-speed multiwavelength quantum dot comb laser, grown by molecular beam epitaxy, is demonstrated. The device is characterized with a 75.9 nm (full width at half maximum) and a 91.4 nm (Δ−15 dB) wide lasing spectrum. There are 105 and 185 simultaneously emitted longitudinal modes with a maximum channel intensity nonuniformity of less than 3 dB in the spectral range of 1231–1252 nm and 1274–1311 nm, respectively, for a laser with 1040 μm cavity length. The channel spacing can be tuned with cavity length and remains invariant in the temperature range of 300–323 K. The small signal modulation bandwidth is 7.5 GHz.

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