High performance tantalum carbide metal gate stacks for nMOSFET application

Hou, Yunfei; Yen, F.Y.; Hsu, P.F.; Chang, V.S.; Lim, Poon Nian; Hung, C.L.; Yao, L.G.; Jiang, Jun; Lin, H.J.; Jin, Y.; Jang, Sun‐Joo; Tao, Hun-Jan; Chen, S.C.; Liang, Mong

doi:10.1109/iedm.2005.1609258

Cited by 19 publications

(11 citation statements)

References 3 publications

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“…The simulation points are also labeled with corresponding t k . In addition, the simulated I g was found to match existing data in the same manufacturing process [6], as shown in the inset of the figure for two different combinations of t k and t IL .…”

Section: Discussionsupporting

confidence: 56%

“…However, one of the fundamental differences should be kept in mind: HfO 2 permittivity is higher than that of HfSiON, and as a consequence of maintaining the same EOT, the HfO 2 dielectric is much thicker. Indeed, this is the fact since a fair comparison of experimental I g between HfSiON and HfO 2 has been published in the literature [6].…”

Section: Discussionmentioning

confidence: 95%

“…TaC/HfSiON/SiON n-and p-MOSFETs were fabricated in a manufacturing process detailed elsewhere [6]. A TEM picture of the underlying TaC/HfSiON/SiON/Si system is shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

“…2. The inset shows a comparison of the simulated Ig with experimental values [6] in the same TaC/HfSiON/SiON process, plotted versus electrical gate oxide thickness in inversion. V th is the threshold voltage.…”

Section: Calculation and Fittingmentioning

confidence: 99%

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Evidence for a Very Small Tunneling Effective Mass (0.03 $m_{0}$) in MOSFET High-$k$ (HfSiON) Gate Dielectrics

Chen

Hsu

2012

IEEE Electron Device Lett.

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We have recently conducted experimental and modeling tasks on TaC/HfSiON/SiON n-type MOSFETs, leading to an effective mass of 0.03m 0 for 2-D electrons tunneling in high-k HfSiON dielectrics. In this letter, we present extra evidence obtained from complementary MOSFETs undergoing the same TaC/HfSiON/SiON processing, which shows that such a very small tunneling effective mass is existent not only for 3-D electrons but also for 2-D holes. This new finding is very important because it can substantially enhance the current understanding of gate tunneling leakage suppression in metal-gate high-k MOSFETs. Index Terms-Effective mass, effective oxide thickness (EOT), HfO 2 , HfSiON, high-k, metal gate, MOSFETs, tunneling.

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Section: Discussionsupporting

confidence: 56%

Section: Discussionmentioning

confidence: 95%

“…TaC/HfSiON/SiON n-and p-MOSFETs were fabricated in a manufacturing process detailed elsewhere [6]. A TEM picture of the underlying TaC/HfSiON/SiON/Si system is shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

Section: Calculation and Fittingmentioning

confidence: 99%

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Evidence for a Very Small Tunneling Effective Mass (0.03 $m_{0}$) in MOSFET High-$k$ (HfSiON) Gate Dielectrics

Chen

Hsu

2012

IEEE Electron Device Lett.

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“…Devices used for the study were fabricated by a foundry's typical 65 nm complementary metal oxide semiconductor technology [5] with the n-metal/HfO 2 gate stack. The high-k and metal films were deposited by atomic layer deposition and physical vapor deposition, respectively.…”

Section: Methodsmentioning

confidence: 99%

Observations in trapping characteristics of positive bias temperature instability on high-k/metal gate n-type metal oxide semiconductor field effect transistor with the complementary multi-pulse technique

et al. 2008

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ALD gate dielectrics for improved threshold voltage stability in AlGaN/GaN MOS-HFETs for power applications

Ramanan

Lee

Misra

2015

Semicond. Sci. Technol.

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Dielectrics by atomic layer deposition (ALD) are sought after for fabricating AlGaN/GaN based metal oxide semiconductor heterojunction field effect transistors (MOS-HFETs) for power applications. The ideal gate dielectric is required to suppress gate leakage and minimize threshold voltage (V T ) instability by hosting minimal interface traps. Additionally, with the need for an enhancement mode device, it is preferable if it minimizes V T shift in the negative direction. For the first time, we compare popular ALD dielectrics like SiO 2 , Al 2 O 3 , HfO 2 and HfAlO with identical electrical thickness on AlGaN/GaN, thereby ensuring identical electrostatic conditions across different dielectrics. High-k ALD dielectrics (HfAlO, HfO 2 and Al 2 O 3 ) are found to suppress gate leakage but host a high density of interface traps with AlGaN, thereby resulting in significant V T instability. ALD SiO 2 gate dielectric, annealed in N 2 above 600 °C, is a promising gate dielectric candidate which provides the most stable and least negative shift in V T while also substantially suppressing gate leakage below that of an HFET.

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High performance tantalum carbide metal gate stacks for nMOSFET application

Cited by 19 publications

References 3 publications

Evidence for a Very Small Tunneling Effective Mass (0.03 $m_{0}$) in MOSFET High-$k$ (HfSiON) Gate Dielectrics

Evidence for a Very Small Tunneling Effective Mass (0.03 $m_{0}$) in MOSFET High-$k$ (HfSiON) Gate Dielectrics

Observations in trapping characteristics of positive bias temperature instability on high-k/metal gate n-type metal oxide semiconductor field effect transistor with the complementary multi-pulse technique

ALD gate dielectrics for improved threshold voltage stability in AlGaN/GaN MOS-HFETs for power applications

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