High performance solution processed oxide thin-film transistors with inkjet printed Ag source–drain electrodes

Gillan, Liam; Leppäniemi, Jaakko; Eiroma, Kim; Majumdar, Himadri S.; Alastalo, Ari

doi:10.1039/c7tc05679f

Cited by 20 publications

(30 citation statements)

References 34 publications

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“…In order to further investigate whether interfacial modification layers can optimize the interface contact between the source/drain electrodes and ZnO, we fabricated ZnO TFTs using high work-function Ag electrodes which were deposited on top of the ZnO thin film and interfacial modification layer with a shadow mask. As reported previously, Ag is a promising candidate for solution processed S/D contacts since Ag is resistant to oxidation, highly electrically conductive, and commercially available as an ink for different printing methods like inkjet printing [ 31 , 32 , 33 , 34 ]. Moreover, nanoparticle Ag inks could enable low temperature production of conductive films [ 31 ].…”

Section: Resultsmentioning

confidence: 99%

“…As reported previously, Ag is a promising candidate for solution processed S/D contacts since Ag is resistant to oxidation, highly electrically conductive, and commercially available as an ink for different printing methods like inkjet printing [ 31 , 32 , 33 , 34 ]. Moreover, nanoparticle Ag inks could enable low temperature production of conductive films [ 31 ]. However, high contact resistance exists at the Ag electrode/semiconductor interface due to the spatial potential barrier existing at the Ag/metal oxide interface, which limits charge carrier mobilities and reduces the device performance [ 35 ].…”

Section: Resultsmentioning

confidence: 99%

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Effects of Interfacial Passivation on the Electrical Performance, Stability, and Contact Properties of Solution Process Based ZnO Thin Film Transistors

Wan

Lin

et al. 2018

Materials

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This paper reports low temperature solution processed ZnO thin film transistors (TFTs), and the effects of interfacial passivation of a 4-chlorobenzoic acid (PCBA) layer on device performance. It was found that the ZnO TFTs with PCBA interfacial modification layers exhibited a higher electron mobility of 4.50 cm2 V−1 s−1 compared to the pristine ZnO TFTs with a charge carrier mobility of 2.70 cm2 V−1 s−1. Moreover, the ZnO TFTs with interfacial modification layers could significantly improve device shelf-life stability and bias stress stability compared to the pristine ZnO TFTs. Most importantly, interfacial modification layers could also decrease the contact potential barrier between the source/drain electrodes and the ZnO films when using high work-function metals such as Ag and Au. These results indicate that high performance TFTs can be obtained with a low temperature solution process with interfacial modification layers, which strongly implies further potential for their applications.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Effects of Interfacial Passivation on the Electrical Performance, Stability, and Contact Properties of Solution Process Based ZnO Thin Film Transistors

Wan

Lin

et al. 2018

Materials

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“…Inkjet printing is a promising technique to fabricate thin‐film transistors (TFTs) and integrated complementary metal‐oxide‐semiconductor (CMOS) circuits because of its patterned deposition, cost‐competitiveness, customizability, efficiency in material utilization, and ease for making large‐size device arrays . There are many material candidates for constructing printed electronic devices, such as amorphous silicon and polysilicon, 2D materials, organic semiconductors, metal oxides, and semiconducting single‐walled carbon nanotubes (sc‐SWCNTs) . Among them, metal oxide TFTs have many advantages, such as high I on / I off ratios, transparency, and environmental stability.…”

Section: Introductionmentioning

confidence: 99%

High‐Performance Partially Printed Hybrid CMOS Inverters Based on Indium‐Zinc‐Oxide and Chirality Enriched Carbon Nanotube Thin‐Film Transistors

Luo

Xie²,

Wei

et al. 2019

Adv Elect Materials

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Inkjet printing is a promising technique to fabricate thin-film transistors (TFTs) and integrated complementary metal-oxidesemiconductor (CMOS) circuits because of its patterned Complementary metal-oxide-semiconductor (CMOS) inverters with low power consumption and high noise immunity are essential for realizing practical applications of printed logic gates and circuits. However, the performance of existing printed CMOS inverters is still unsatisfactory because p-type and n-type transistors do not match well. This work demonstrates novel low-voltage and high-performance CMOS inverters using partially printed thin-film transistors (TFTs) on 50 nm HfO 2 /Si substrates based on n-type indium zinc oxides (IZOs) and p-type chirality enriched (9,8) semiconducting single-walled carbon nanotubes (SWCNTs). The high-k dielectric materials grown using atomic layer deposition and (9,8) SWCNTs with relatively large band gaps help to match the characteristics of p-type and n-type transistors-the IZO and SWCNT TFTs exhibit similar mobility on/off ratio, small hysteresis, and low sub-threshold swing at low operating voltages. The hybrid CMOS inverters demonstrate excellent performance with the highest voltage gain up to 45, the largest noise margin of 83% at 1/2 V dd , and the lowest static power consumption of 0.4 µW at V dd of 2 V among recently reported printed CMOS inverters under relatively low annealing temperatures (300 °C). The strategies demonstrated here can be considered as general approaches to realize a new generation of high-performance printed logic gates and circuits. Printable ElectronicsThe ORCID identification number(s) for the author(s) of this article can be found under https://doi.

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“…The ink was then annealed at 180 °C for 30 min (ink manufacturer‐specified annealing condition). However, the as‐prepared devices exhibited poor electrical characteristics with unstable I d and large hysteresis loop (Figure S5a, Supporting Information), typical to printed Ag contacts . Longer annealing at 180 °C resulted in improved characteristics with stabile I d , however, the V hyst was still substantial (Figure S5b, Supporting Information).…”

mentioning

confidence: 99%

“…The poor stability of the printed Ag contacts can arise from further Ag migration to the semiconductor layer, which is in contrast to the stabile interface oxide formation of evaporated Al‐contacts . The Ag contacts could be improved by printing a thin, n ‐doped interface layer, such as polyetyheleneimine‐doped In 2 O 3 , to assist in the charge injection . An alternative route to Ag is to use the ROP of conductive oxides or Cu nanoparticles as the S/D contacts.…”

mentioning

confidence: 99%

Reverse‐Offset Printing of Metal‐Nitrate‐Based Metal Oxide Semiconductor Ink for Flexible TFTs

Leppäniemi

Sneck

Kusaka

et al. 2019

Adv Elect Materials

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Reverse‐offset printing (ROP) is a novel printing technique capable of forming electronics‐industry‐relevant linewidths (≈1 µm) with good thickness control and sharp edge definition. It is demonstrated that through a controlled oxygen‐plasma treatment, the energy of the surfaces related to the process steps of ROP can be optimized to allow the patterning of metal‐oxide semiconductor layers using a simple printing ink based on metal nitrates dissolved in an organic solvent. The steps of the ROP process are analyzed using surface‐energy measurements and Fourier transform infrared spectra of the ink during drying. Thin‐film transistors (TFTs) fabricated using a roll‐to‐plate ROP of In2O3 semiconductor and evaporated Al source/drain (S/D) contacts show, on average, mobilities of 3.1 and 3.5 cm2 V−1 s−1, and ON/OFF‐ratios up to 108 and 107 on a Si/SiO2 substrate and on a flexible polyimide‐type substrate, respectively. TFTs on the flexible substrate with also the S/D‐contacts printed with ROP using Ag nanoparticle ink exhibit a 1.4 cm2 V−1 s−1 mobility. To demonstrate the scalability of the process, continuous lines of In2O3 are printed using a roll‐to‐roll‐compatible (R2R) ROP with linewidths down to ≈2 µm. This process is expected to lead to miniaturized metal‐oxide circuits as required by flexible high‐resolution sensor arrays and displays.

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High performance solution processed oxide thin-film transistors with inkjet printed Ag source–drain electrodes

Abstract: Engineering of an In2O3 semiconductor and Ag source/drain interface in inkjet-printed thin-film transistors enhances the saturation mobility by two orders of magnitude.

Cited by 20 publications

References 34 publications

Effects of Interfacial Passivation on the Electrical Performance, Stability, and Contact Properties of Solution Process Based ZnO Thin Film Transistors

Effects of Interfacial Passivation on the Electrical Performance, Stability, and Contact Properties of Solution Process Based ZnO Thin Film Transistors

High‐Performance Partially Printed Hybrid CMOS Inverters Based on Indium‐Zinc‐Oxide and Chirality Enriched Carbon Nanotube Thin‐Film Transistors

Reverse‐Offset Printing of Metal‐Nitrate‐Based Metal Oxide Semiconductor Ink for Flexible TFTs

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