Memristors are designed to mimic the brain's integrated functions of storage and computing, thus breaking through the von Neumann framework. However, the formation and breaking of the conductive filament inside a conventional memristor is unstable, which makes it difficult to realistically mimic the function of a biological synapse. This problem has become a main factor that hinders memristor applications. The ferroelectric memristor overcomes the shortcomings of the traditional memristor because its resistance variation depends on the polarization direction of the ferroelectric thin film. In this work, an Au/Hf 0.5 Zr 0.5 O 2 /p +-Si ferroelectric memristor is proposed, which is capable of achieving resistive switching characteristics. In particular, the proposed device realizes the stable characteristics of multilevel storage, which possesses the potential to be applied to multi-level storage. Through polarization, the resistance of the proposed memristor can be gradually modulated by flipping the ferroelectric domains. Additionally, a plurality of resistance states can be obtained in bidirectional continuous reversibility, which is similar to the changes in synaptic weights. Furthermore, the proposed memristor is able to successfully mimic biological synaptic functions such as longterm depression, long-term potentiation, paired-pulse facilitation, and spike-timing-dependent plasticity. Consequently, it constitutes a promising candidate for a breakthrough in the von Neumann framework.

This paper reports low temperature solution processed ZnO thin film transistors (TFTs), and the effects of interfacial passivation of a 4-chlorobenzoic acid (PCBA) layer on device performance. It was found that the ZnO TFTs with PCBA interfacial modification layers exhibited a higher electron mobility of 4.50 cm2 V−1 s−1 compared to the pristine ZnO TFTs with a charge carrier mobility of 2.70 cm2 V−1 s−1. Moreover, the ZnO TFTs with interfacial modification layers could significantly improve device shelf-life stability and bias stress stability compared to the pristine ZnO TFTs. Most importantly, interfacial modification layers could also decrease the contact potential barrier between the source/drain electrodes and the ZnO films when using high work-function metals such as Ag and Au. These results indicate that high performance TFTs can be obtained with a low temperature solution process with interfacial modification layers, which strongly implies further potential for their applications.

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In this study, we report high-performance amorphous Ga 2 O 3 metal-oxide (AMO) thin film transistor (TFT) using an low-temperature solution-process coupling with In alloy engineering. In doping can lower the activation temperature of gallium oxide and increase the oxygen vacancy concentration to further activate the device. The optical bandgap of IGO film can be changed from 5.3 to 4.25 eV with the In doping concentration (C In) increasing from 0 % to 50 %. All TFTs with IGO channels exhibit n-type transistor characteristics and the evolution of their key electrical parameters with the In-dopant is well elucidated by the structural and morphological characterization. With the increase of C In , the performance of the device becomes better. Finally, a saturation field-effect mobility of 3.63 cm 2 V-1 s-1 , a current on/off ratio of 10 6 , and a threshold voltage of 2.5 V are achieved by the In 0.5 Ga 0.5 O (C In = 50%) based device. The In 0.5 Ga 0.5 O TFT also demonstrates good bias stress stability. Under the action of 20 V and-20 V gate bias for 3000 s, the ΔV TH is +2.27 V and-1.95 V, respectively. Index Terms-thin film transistor (TFT), solution process, gallium oxide (Ga 2 O 3), In doping.