High‐Performance Silicon Nanowire Array Photoelectrochemical Solar Cells through Surface Passivation and Modification

Wang, Xin; Peng, Kui‐Qing; Pan, Xiaojun; Xue, Cun; Yang, Yang; Li, Li; Meng, Xiang‐Min; Zhang, Wenjun; Lee, Shuit‐Tong

doi:10.1002/anie.201104102

Cited by 131 publications

(89 citation statements)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Vertically aligned arrays of p-Si microwires (Si-MWs) [9,11,12,15,26], nanowires (Si-NWs) [10,16,17,[19][20][21], and tilted p-Si nanobelts (Si-NBs) [27,28] have been demonstrated to exhibit enhanced performance toward PEC hydrogen evolution reaction (HER), due primarily to the significantly increased electrode/electrolyte contact area and the unique light harvesting capability that enables the decoupling of light capture and charge carrier collection. In addition to their HER performance, the operational stability of both planar Si [18,22,23,[30][31][32] and Si nanostructure array photoelectrodes [28,33] also has been recently improved to a remarkable extent.…”

Section: Introductionmentioning

confidence: 99%

Amorphous oxygen-rich molybdenum oxysulfide Decorated p-type silicon microwire Arrays for efficient photoelectrochemical water reduction

et al. 2015

View full text Add to dashboard Cite

We report the fabrication of p-type silicon (Si) photocathodes consisting of well-ordered Si microwire (Si-MW) arrays coupled with non-precious and earth-abundant amorphous oxygen-rich molybdenum oxysulfide (MoO x S y ) as both a hydrogen evolution catalyst and a passivation layer. The MoO x S y is conformally grown on the Si-MW surface through photo-assisted cyclic voltammetric (CV) deposition. By adjusting the cycle numbers of the CV deposition, Si-MW array electrodes with different MoO x S y catalyst loadings (Si-MWs@MoO x S y ) have been obtained and comprehensively characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), Xray photoelectron spectroscopy (XPS), and Raman and Fourier-transform infrared spectroscopies. The photoelectrochemical performance of the Si-MWs@MoO x S y cathodes toward water reduction is investigated and compared with that of platinum nanoparticle decorated Si-MW array electrodes (Si-MWs@PtNPs). An optimized Si-MWs@MoO x S y photocathode is found to exhibit activity comparable to that of the Si-MWs@PtNPs one, with a much better stability in acidic medium. In neutral electrolyte, Si-MWs@MoO x S y outperforms Si-MWs@PtNPs in terms of both activity and stability. Given the low materials cost, easy and well-established electrode fabrication procedure, and high 1 3 5 7 Please cite this article as: X.-Q. Bao, et al., Amorphous oxygen-rich molybdenum oxysulfide Decorated p-type silicon microwire Arrays for efficient photoelectrochemical water reduction, Nano Energy (2015), http://dx.doi.org/10.1016/j.nanoen.2015.06.014demonstrated photoelectrochemical performance, the Si-MWs@MoO x S y arrays reported here hold substantial promise for use as low-cost and efficient photocathodes for water reduction.

show abstract

Section: Introductionmentioning

confidence: 99%

Amorphous oxygen-rich molybdenum oxysulfide Decorated p-type silicon microwire Arrays for efficient photoelectrochemical water reduction

et al. 2015

View full text Add to dashboard Cite

show abstract

“…Silicon nanowires exhibit interesting electrical and optical properties [20][21][22] and are of considerable interest for applications in thermoelectrics [23], sensing [24,25], photovoltaics and photoelectrochemistry [26][27][28][29], surface functionalization [30] (including formation of superhydrophobic surfaces) [31], catalysis [32], nanoelectronics [33][34][35][36][37], and energetic materials [38]. An improved mechanistic understanding of the chemistry involved in metal assisted etching is vital to achieving more reproducible and controlled nanostructure formation.…”

Section: Introductionmentioning

confidence: 99%

The stoichiometry of metal assisted etching (MAE) of Si in V2O5+HF and HOOH+HF solutions

Kołasiński

Barclay

Sun

et al. 2015

Electrochimica Acta

View full text Add to dashboard Cite

“…For this study, the current-voltage (I-V) curves of graphene Schottky contact on n-type Si (n-Si) with and without sulfide treatment are measured and compared at various temperatures, in order to understand the carrier conduction mechanisms. In recent years, solar cells, Schottky diodes and memory devices based on the n-Si samples have attracted great interest [3,[6][7][8][10][11][12][13][14][15][16][17][18][19]. Si has been a popular material of choice because it is very abundant, non-toxic, and has a rich history in advanced electronics.…”

Section: Introductionmentioning

confidence: 99%

Temperature-dependent electrical properties for graphene Schottky contact on n-type Si with and without sulfide treatment

2014

View full text Add to dashboard Cite

The temperature-dependent current-voltage (I-V) characteristics of graphene/n-type Si Schottky diodes with and without sulfide treatment were measured in the temperature range of 150-420 K. The temperature dependence of forward-bias I-V characteristics can be explained on the basis of the thermionic emission theory by assuming the presence of Gaussian distribution of the barrier heights. The graphene/n-type Si device with sulfide treatment exhibits a good rectifying behavior with the ideality factor of 1.8 and low leakage at 300 K. The enhanced device performance is considered to mainly come from the presence of Si-S bonds that serve to improve the Schottky barrier inhomogeneity. Compared to the fitting data for the temperature-dependent reverse-bias I-V characteristics of graphene/n-type Si devices without sulfide treatment, the fitting data for the temperature-dependent reverse-bias I-V characteristics of graphene/n-type Si devices with sulfide treatment show that a higher barrier height for hopping result in a lower leakage current. This is because of more homogenous barrier height for graphene/n-type Si devices with sulfide treatment.

show abstract

High‐Performance Silicon Nanowire Array Photoelectrochemical Solar Cells through Surface Passivation and Modification

Cited by 131 publications

References 37 publications

Amorphous oxygen-rich molybdenum oxysulfide Decorated p-type silicon microwire Arrays for efficient photoelectrochemical water reduction

Amorphous oxygen-rich molybdenum oxysulfide Decorated p-type silicon microwire Arrays for efficient photoelectrochemical water reduction

The stoichiometry of metal assisted etching (MAE) of Si in V2O5+HF and HOOH+HF solutions

Temperature-dependent electrical properties for graphene Schottky contact on n-type Si with and without sulfide treatment

Contact Info

Product

Resources

About