High performance resist for EUV lithography

Gonsalves, Kenneth E.; Thiyagarajan, Muthiah; Choi, Jae‐Hak; Zimmerman, Paul; Cerrina, F.; Nealey, Paul F.; Golovkina, V.; Wallace, John; Batina, Nikola

doi:10.1016/j.mee.2004.08.003

Cited by 19 publications

(10 citation statements)

References 24 publications

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“…The molecular weights of the synthesized copolymers were determined using GPC, and the weight-average molecular weights of MAPDST-STYCOOH ( VIII ) and MAPDST-NVK ( X ) copolymers were M w = 2800 and M w = 15 200 with a polydispersity (PDI) of 1.199 and 2.148, respectively (see Table ). According to our previous reports, styrene-containing co-polymers show low molecular weights. , The styrene-based co-polymer ( VIII ) was also found to have low molecular weight, compared to other newly developed polymers. Thermogravimetric analysis (TGA) was used to investigate the thermal stabilities of the polymers (Figure ).…”

Section: Resultsmentioning

confidence: 61%

“…According to our previous reports, styrene-containing co-polymers show low molecular weights. 19,27 The styrene- based co-polymer (VIII) was also found to have low molecular weight, compared to other newly developed polymers. Thermogravimetric analysis (TGA) was used to investigate the thermal stabilities of the polymers (Figure 5).…”

Section: ■ Results and Discussionmentioning

confidence: 97%

“…Organic polymeric materials have found many applications in optical and electronic devices. − Many different organic monomers were polymerized to develop polymer systems for optical applications − and interests have been focused on acrylic and methacrylic polymers, because of their well-known optical properties and good film-forming capability. − A larger number of different methacrylic and acrylic monomers were prepared and polymerized previously under radical polymerization methods to produce distinct polymers with different functional groups, polarities by covering a broad range of molecular weights and glass-transition temperatures ( T g ). At the same time, the multicomponent polymer systems containing various functionalities bonded to a methacrylate-based core have also been reported for their use in nanolithography. − …”

Section: Introductionmentioning

confidence: 99%

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Radiation-Sensitive Novel Polymeric Resist Materials: Iterative Synthesis and Their EUV Fragmentation Studies

Satyanarayana

Kessler

Singh

et al. 2014

ACS Appl. Mater. Interfaces

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Polymerization of (4-(methacryloyloxy)phenyl)dimethylsulfoniumtriflate (MAPDST), as a key monomer containing the radiation sensitive sulfonium functionality, with various other monomers such as methyl methacrylate (MMA), 4-carboxy styrene (STYCOOH), N-vinyl carbazole (NVK) in different molar ratios via free-radical polymerization method is described. This methodology led to the development of a small chemical library of six different radiation sensitive polymers for lithography applications. Fourier transform infrared (FT-IR) and nuclear magnetic resonance (NMR) spectroscopy identified the reaction products as MAPDST homopolymer and MAPDST-MMA, MAPDST-STYCOOH, MAPDST-NVK copolymers. Molecular weights were obtained from gel permeation chromatography and the decomposition temperature (Td) values were determined using thermogravimetric analysis (TGA). The effect of extreme ultraviolet (EUV) irradiation on a thin poly(MAPDST) film was investigated using monochromatic synchrotron excitation. These new polymeric materials were also exposed to electron-beam lithography (EBL) and extreme ultraviolet lithography (EUVL) to achieve 20-nm line patterns.

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Section: Resultsmentioning

confidence: 61%

Section: ■ Results and Discussionmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Radiation-Sensitive Novel Polymeric Resist Materials: Iterative Synthesis and Their EUV Fragmentation Studies

Satyanarayana

Kessler

Singh

et al. 2014

ACS Appl. Mater. Interfaces

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“…Therefore, tremendous efforts have been devoted to new lithography technologies to fabricate such small patterns which exceed the diffraction limits of conventional photolithography . Most prominent among the proposed next‐generation lithography (NGL) is extreme UV lithography, which uses a short wavelength of 13.4 nm (generally known as EUV) . Potential alternatives to EUV that have been explored for NGL include ion‐beam lithography, nanoimprint lithography (NIL) and electron‐beam (e‐beam) lithography .…”

Section: Introductionmentioning

confidence: 99%

Organosilicate polymer e‐beam resists with high resolution, sensitivity and stability

Lee

Sim

Lee

et al. 2013

Applied Organom Chemis

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Hydrogen silsesquioxane (HSQ) is an attractive electron-beam (e-beam) resist for sub-20 nm lithography owing to its high resolution, excellent line-edge roughness (LER) and good plasma etch resistance. However, the sensitivity and long-term stability of HSQ need to be significantly improved to have HSQ resists adopted for volume manufacturing. Here we develop novel organosilicate e-beam resists with improved e-beam sensitivity and stability as an alternative to HSQ resists. Copolymers of norbornene ethyltrimethoxysilane (NETMS) with 1,2-bis(triethoxysilyl)ethane, synthesized via acid-catalyzed sol-gel reactions, show excellent e-beam sensitivity with around a sixfold reduction in the critical dose as compared with HSQ but poor LER characteristics. Terpolymers were then synthesized using p-chloromethylphenyl trimethoxysilane (p-CMPTMS), NETMS and tetraethoxysilane, which exhibit significant improvement in sensitivity as compared with previously reported materials, together with high-resolution patterns and long-term stability. High-resolution patterns of features as small as 20 nm with excellent LER were successfully fabricated employing organosilicate terpolymers using a 100 keV e-beam. The dose for patterning 20 nm lines was reduced from 4000 mC cm À2 for HSQ to 900 mC cm À2 for an optimized terpolymer resist. FT-IR measurements suggest that the main reason for the increased e-beam sensitivity is chain transfer reaction between the norbornene moieties, which provide an efficient cross-linking mechanism by the e-beam generated radicals.

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“…The EUV-IL method has played an important role in the development of high-resolution resists for this technology by making high-resolution exposures available long before EUV projection tools become available. 8,9 Second, it is relatively easy to fabricate diffraction gratings with sufficiently high diffraction and transmission efficiency at this wavelength on silicon nitride membranes. Finally, the short inelastic mean free path of photoelectrons created by EUV photons in a resist at this energy ͑92.5 eV͒ means that the blurring effect of photoelectrons will be insignificant down to sub-10 nm resolution.…”

Section: Introductionmentioning

confidence: 99%

Extreme ultraviolet interference lithography at the Paul Scherrer Institut

Auzelyté

2009

J. Micro/Nanolith. MEMS MOEMS

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We review the performance and applications of an extreme ultraviolet interference lithography ͑EUV-IL͒ system built at the Swiss Light Source of the Paul Scherrer Institut ͑Villigen, Switzerland͒. The interferometer uses fully coherent radiation from an undulator source. 1-D ͑line/ space͒ and 2-D ͑dot/hole arrays͒ patterns are obtained with a transmission-diffraction-grating type of interferometer. Features with sizes in the range from one micrometer down to the 10-nm scale can be printed in a variety of resists. The highest resolution of 11-nm half-pitch line/space patterns obtained with this method represents a current record for photon based lithography. Thanks to the excellent performance of the system in terms of pattern resolution, uniformity, size of the patterned area, and the throughput, the system has been used in numerous applications. Here we demonstrate the versatility and effectiveness of this emerging nanolithography method through a review of some of the applications, namely, fabrication of metallic and magnetic nanodevice components, self-assembly of Si/ Ge quantum dots, chemical patterning of self-assembled monolayers ͑SAM͒, and radiation grafting of polymers. © 2009 Society of Photo-Optical Instrumentation Engineers.

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High performance resist for EUV lithography

Cited by 19 publications

References 24 publications

Radiation-Sensitive Novel Polymeric Resist Materials: Iterative Synthesis and Their EUV Fragmentation Studies

Radiation-Sensitive Novel Polymeric Resist Materials: Iterative Synthesis and Their EUV Fragmentation Studies

Organosilicate polymer e‐beam resists with high resolution, sensitivity and stability

Extreme ultraviolet interference lithography at the Paul Scherrer Institut

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