High-Performance Low-Leakage-Current AlN/GaN HEMTs Grown on Silicon Substrate

Medjdoub, Farid; Zégaoui, M.; Ducatteau, D.; Rolland, N.; Rolland, P.A.

doi:10.1109/led.2011.2138674

Cited by 66 publications

(35 citation statements)

References 12 publications

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“…Recently, we have shown the possibility to achieve high quality ultra-thin AlN/GaN-on-Si heterostructures with a unique combination of large polarisation and low leakage current [8,9]. In this Letter, our AlN/GaN HEMT technology grown on silicon substrate has been scaled down to 100 nm (gate length) and the results show cutoff frequencies above 100 GHz over a large range of drain voltage with excellent DC performances.…”

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confidence: 95%

“…Thus, the AlN/GaN heterostructure appears to be an ideal candidate to push the limits of GaN-based devices further owing to the maximum theoretical spontaneous and piezoelectric difference between the epitaxial AlN barrier and the underlying GaN layer. If the tricky growth conditions of this binary can be controlled, AlN/GaN HEMTs promise breakthrough performances, superior to any other III-V nitride-based heterostructure [6,7].Recently, we have shown the possibility to achieve high quality ultra-thin AlN/GaN-on-Si heterostructures with a unique combination of large polarisation and low leakage current [8,9]. In this Letter, our AlN/GaN HEMT technology grown on silicon substrate has been scaled down to 100 nm (gate length) and the results show cutoff frequencies above 100 GHz over a large range of drain voltage with excellent DC performances.…”

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confidence: 99%

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Beyond 100 GHz AlN/GaN HEMTs on silicon substrate

2011

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A report is presented on high-speed 100 nm AlN/GaN high-electronmobility transistors (HEMTs) grown on (111) high-resistive silicon substrate. The device delivers an extrinsic peak transconductance g m ¼ 530 mS/mm, a maximum current of 1.74 A/mm, and current gain and maximum oscillation cutoff frequencies of f t ¼ 103 GHz and f max ¼ 162 GHz, which represent the highest cutoff frequencies for AlN/GaN HEMTs on silicon substrate. The results show the outstanding potential of this material system grown on silicon for lowcost high-power millimetre-wave applications.Introduction: Next-generation wireless communications operating in the millimetre-wave frequency range require an ever-increasing amount of power. GaN (gallium nitride) transistors have the potential to replace at least part of the very large vacuum electron devices market for millimetre-wave applications such as communications and automotive radars. Its large bandgap, high breakdown field, high electron mobility and its ability to form heterojunctions in the (In, Al, Ga)N materials matrix are its attractive properties in comparison to conventional gallium arsenide pseudomorphic-HEMTs (high electron mobility transistors). In the last decade, outstanding performance has been demonstrated with AlGaN/GaN HEMTs [1], yielding in the highest power handling capability of all solid state device configurations up to now. The excellent high power/frequency GaN HEMT performances reported so far have been mainly achieved on SiC substrate, which makes these devices fairly expensive. Cost reductions in monolithic millimetre-wave integrated circuit (MMIC) chip manufacturing could lead to a significant deployment of this technology in the future. A possibility to make GaN transistors cost competitive with other technologies is to perform the growth on large diameter silicon substrates (GaN-on-Si growth technology). However, to increase their frequency of operation to millimetre-wave frequencies, improved growth in combination with the introduction of new device structures are necessary. In this frame, In 0.17 Al 0.83 N/GaN HEMTs have been proposed as an alternative to the common AlGaN/GaN configuration [2, 3]. Indeed, InAlN can be grown lattice matched to GaN and the 2DEG (two-dimensional electron gas) induced by the difference in spontaneous polarisation is larger than in the typical AlGaN/GaN heterostructure. This results in higher current density [2] and thus higher output power density. This heterostructure also allows implementing thinner barriers well below 10 nm while maintaining outstanding 2DEG properties [4], which enables highly favourable aspect ratio (gate length on gate to channel distance) as needed when using ultra-short gate lengths with the aim of increasing device frequency performance [5]. On the other hand, high gate leakage current is typically observed with this configuration and has not yet been solved. This seems to be due to the presence of indium that may create parasitic conduction under a high electric field. Thus, the AlN/GaN heterostructure a...

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Beyond 100 GHz AlN/GaN HEMTs on silicon substrate

2011

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“…Many of these performance impairments have been traced back to surface and bulk trapping [1], [2]. Post-growth passivation techniques have become the most popular method to address the deleterious effects of surface state traps and include conformal oxide and nitride depositions [3], [4], [5], [6]. Surface chemical treatments have been investigated to minimize the effects of virtual gating on frequency performance [7], [8], [9].…”

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confidence: 99%

“…This suggests there are more performance gains to be obtained by the technology if the sources of these modes can be addressed, either by materials or device design. The binary-barrier AlN/GaN HEMT has set remarkable performance benchmarks due to the exceptionally high polarization-induced 2DEG density achievable (up to 6×10 13 cm −2 ) with high mobility (1800 cm 2 /Vs) [3], [13], [14], [15]. Yet only a handful of HEMT designs have leveraged a few of the attributes that are inherent to this particular heterostructure [14], [16], [17], [18].…”

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Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

Deen

Storm

Katzer

et al. 2016

Applied Physics Letters

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A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are utilized in an AlN/GaN/AlN/GaN heterostructure wherein the top 2DEG serves as a quasi-equipotential that screens potential fluctuations resulting from distributed surface and interface states. The bottom channel serves as the transistor's modulated channel. Dual-channel AlN/GaN heterostructures were grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. HEMTs fabricated with 300 nm long recessed gates demonstrated a gate lag ratio (GLR) of 0.88 with no degradation in drain current after bias stressed in subthreshold. These structures additionally achieved small signal metrics ft/fmax of 27/46 GHz. These performance results are contrasted with the non-recessed gate dual-channel HEMT with a GLR of 0.74 and 82 mA/mm current collapse with ft/fmax of 48/60 GHz.

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“…Уже продемонстрированы AlN/GaN-транзисторы с предельной частотой усиления по току и мощности 342 и 518 ГГц, соответствен-но [5,7,8]. Активно развиваются транзисторы на основе in situ пассивированных AlN/GaN-ГЭС, в которых по-лучены малые токи утечки без дополнительного подза-творного диэлектрика [9] и достигнута рекордная ком-бинация высокого пробивного напряжения и удельной проводимости [10].…”

Section: Introductionunclassified

AlN/GaN-гетероструктуры для нормально закрытых транзисторов

Журавлев¹,

Малин²,

Мансуров³

et al. 2017

Физика И Техника Полупроводников

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Рассчитана конструкция AlN/GaN гетероструктур со сверхтонким AlN-барьером для нормально закрытых транзисторов. Развита технология молекулярно-лучевой эпитаксии in situ пассивированных гетероструктур SiN/AlN/GaN с двумерным электронным газом. Продемонстрированы нормально закрытые транзисторы с максимальной плотностью тока около 1 А/мм, напряжением насыщения 1 В, крутизной до 350 мС/мм, пробивным напряжением более 60 В. В транзисторах практически отсутствуют эффекты затворного и стокового коллапса тока. DOI: 10.21883/FTP.2017.03.44215.8287

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High-Performance Low-Leakage-Current AlN/GaN HEMTs Grown on Silicon Substrate

Cited by 66 publications

References 12 publications

Beyond 100 GHz AlN/GaN HEMTs on silicon substrate

Beyond 100 GHz AlN/GaN HEMTs on silicon substrate

Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

AlN/GaN-гетероструктуры для нормально закрытых транзисторов

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