High-performance GaN metal–insulator–semiconductor ultraviolet photodetectors using gallium oxide as gate layer

Abstract

In this study, gallium nitride (GaN)-based metal-insulator-semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with a gallium oxide (GaO(x)) gate layer formed by alternating current bias-assisted photoelectrochemical oxidation of n-GaN are presented. By introducing the GaO(x) gate layer to the GaN MIS UV PDs, the leakage current is reduced and a much larger UV-to-visible rejection ratio (R(UV/vis)) of spectral responsivity is achieved. In addition, a bias-dependent spectral response results in marked increase of the R(UV/vis) with bias voltage up to ~10(5). The bias-dependent responsivity suggests the possible existence of internal gain in of the GaN MIS PDs.

High photoresponse from solution processed conventional and inverted ultraviolet photodetectors

“…UV radiation photodetectors (PDs) are promising devices in the optoelectronics world with their importance in application areas such as health, automotive and chip industries, military, space communication, and academic research [1][2][3][4]. Obtaining higher efficiency and longer stability of UV PDs depends upon the optical and electrical performances of the semiconductor materials used and the UV PD architecture.…”

Performance enhancement of GaN metal–semiconductor–metal ultraviolet photodetectors by insertion of ultrathin interfacial HfO2 layer

“…Sang et al 12 have proposed to utilize CaF 2 as an insulation layer to reduce dark current on InGaN and succeeded to suppress dark current by 6 orders of magnitude in comparison to without CaF 2 . Lee et al 13 have suppressed dark current of GaN based UV PDs by depositing GaO x in between metal and the GaN. Various insulating materials such as SiO 2 , ZrO 2 , and Al 2 O 3 are reported.…”

Separated-absorption-multiplication 4H-SiC avalanche photodiodes with adjustable responsivity and response time

“…[1][2][3][4] Therefore, more and more attention has been attracted on the third-generation semiconductor photodiode as a substitute for the photomultiplier tubes (PMTs) and Si photodiode in the field of ultraviolet (UV) light detection, because the characteristics of compactness, ruggedness, low cost and elevated temperature operation are urgently needed for the UV photodiode.…”