High-performance flexible broadband photodetectors enabled by 2D Ta₂NiSe₅ nanosheets

Abstract

Flexible broadband optoelectronic devices play a prominent role in the areas of daily life including wearable optoelectronic systems, health care, and bio-imaging systems. Two-dimensional (2D) narrow-bandgap materials with atomic thickness, adjustable bandgap, mechanical flexibility, as well as excellent optical and electrical properties exhibit great potential for applications in flexible optoelectronic devices. Here, we demonstrate a high-performance photodetector based on high-quality ternary Ta2NiSe5 nanosheets with a narrow bandgap of 0.25 eV. The photodetectors exhibit broadband photodetection capability in the visible-infrared spectrum (405~2200 nm) at room temperature. The maximum values of responsivity can reach up to 280 A W-1 at the wavelength of 405 nm. Meanwhile, the high responsivity of 63.9 A W-1 and detectivity of 3.8 × 109 Jonesare achieved at the wavelength of 2200 nm, respectively. In addition, the obtained Ta2NiSe5-based photodetector shows excellent flexibility and the photodetection performance is almost insignificantly degraded after 1000 bending cycles. These results indicate that the 2D Ta2NiSe5 semiconductor has great potential in future wearable infrared optoelectronic devices.

Quaternary AgInP2S6: A Prospective Robust van der Waals Semiconductor for High‐Speed Photodetectors and their Application in High‐Temperature‐Proof Optical Communications

“…Importantly, temporal photoresponse measurement indicates that the AgInP 2 S 6 photodetector exhibits a fast response rate with the response/recovery time down to ≈1/2 ms (Figure 4d and Figure S9, Supporting Information). These values are compectitive as compared to those of many state‐of‐the‐art 2DLS photodetectors such as MoS 2 , [ 34,35 ] WS 2 , [ 36 ] FeTe 2 , [ 14 ] SnSe, [ 37 ] BiOI, [ 38 ] Nb 2 SiTe 4 , [ 39 ] g‐CN, [ 40 ] Ta 2 NiSe 5 , [ 41 ] PbSnS 2 , [ 42 ] PdPS, [ 43 ] and even the heterojunction devices such as GaSe/InSe [ 44 ] and TaIrTe 4 /WSe 2 [ 45 ] (Figure S10, Supporting Information), making the AgInP 2 S 6 device competitive in optical communication and imaging applications. In the future, the response rate can theoretically be further ameliorated by developing photovoltaic‐mode photodetectors [ 46 ] and vertical photodetectors with ultrashort transport paths.…”

Visible Near-Infrared Photodetection Based on Ta2NiSe5/WSe2 van der Waals Heterostructures

“…Although black phosphorus (BP) exhibits a tunable narrow-bandgap (0.3-1.5 eV) and high carrier mobility, its poor stability currently impedes its widespread utilization in photoelectric detection research [23][24][25][26]. Recently, terephthalic thiocompound (Ta 2 NiSe 5 ), a layered material with weak van der Waals force interactions, has shown significant potential in wide-band photodetection [27,28]. Unlike other two-dimensional materials, Ta 2 NiSe 5 is a ternary chalcogenide compound that possesses a direct narrow bandgap (E g ~0.…”

1D Sb2S3 with Strong Mie Resonance Toward Highly‐Sensitive Polarization‐Discriminating Photodetection and Its Application in High‐Temperature‐Proof Imaging and Dual‐Channel Communications

“…[12][13][14][15][16][17] From the perspective of microscopic crystal structure, low-dimensional vdW materials can generally be classified into three categories, including 0D vdW materials, [18][19][20][21] 1D vdW materials, [22][23][24][25][26] and 2D vdW materials. [27][28][29][30][31][32][33][34][35] Compared to the 0D and 2D counterparts, 1D vdW materials commonly host unique chain-like lattice structures, and therefore these materials are inclined to spontaneously form nanorod/nanowire/nanobelt/nanotube-like crystal morphology. Impressively, the extrinsic quantum confinement effect perpendicular to the axial direction of nanowires, combined with the 1D microscopic crystal structure, endows 1D vdW materials with pronounced anisotropic physical properties.…”