Quaternary AgInP₂S₆: A Prospective Robust van der Waals Semiconductor for High‐Speed Photodetectors and their Application in High‐Temperature‐Proof Optical Communications

Abstract

The emergence of graphene has opened the prelude of extensive research on 2D layered materials. Especially, the diverse crystal structures and exceptional physical properties of multielement van der Waals semiconductors have provided a brand‐new platform for the implementation of novel optoelectronic devices. In this study, for the first time, the optoelectronic properties of a newly emerged quaternary van der Waals semiconductor, namely silver indium phosphorus sulfide (AgInP2S6), have been systematically investigated. It is revealed that the AgInP2S6 photodetector exhibits a fast response rate with the response/recovery time down to ≈1/2 ms. In addition, the AgInP2S6 device demonstrates stable photoswitching operation even under a high working temperature of up to 160 °C in the ambient environment without using any specific protection means, and the photoswitching characteristic is also well reserved after a 10‐h continuous heating at 150 °C in air. Profiting from the strong immunity to environmental thermal disturbance, a proof‐of‐concept high‐temperature optical communication application is demonstrated. In conclusion, this study provides an intriguing paradigm for the realization of the next‐generation optoelectronic devices against extreme working circumstances, which contributes to further broadening the scope of application of 2D material photodetectors in the upcoming future (e.g., space communication and tracking).

High-Detectivity and Broadband Photodetector Based on LiInP2Se6 Semiconductors

“…Many impressive achievements of these photodetectors have been reported, such as ultrahigh photodetectivity, ultrabroad detection band from UV to terahertz, ultrasensitive photodetection, and high-speed photoresponse. − By far, traditional 2D materials-based photodetectors are mostly built on elemental or binary 2D materials . However, compared with the widely explored elemental and binary 2D materials, a series of 2D multicomponent chalcophosphate compounds have been developed, such as AgInP 2 S 6 , CuInP 2 S 6 , MnPX 3 (X = S, Se), and Nb 4 P 2 S 21 . These 2D materials exhibit unique physical and chemical properties distinguishing them from conventional elemental as well as binary 2D materials, thus making them essential candidates for applications in the next-generation optoelectronic devices. , …”

“…Se 6 have been systematically investigated. The highperformance photodetector with a detectivity of 9.48 × 1012 Jones and a high on/off ratio of 10 2 have been realized under a 532 nm laser. Furthermore, the photodetector presents broadband photoresponse from visible to NIR (635−1064 nm) due to the intrinsic defects.…”

Quantum tailoring for polarization-discriminating Bi2S3 nanowire photodetectors and their multiplexing optical communication and imaging applications

“…), and 2D vdWMs ( e.g. , black phosphorus, 13 MoS 2 , 14,15 WSe 2 , 15 Bi 2 O 2 Se, 16 ReSe 2 , 17 CrTe 2 , 18 Ge 4 Se 9 , 19 ZnIn 2 S 4 , 20 AgInP 2 S 6 , 21 etc. ).…”

Emerging Schemes for Advancing 2D Material Photoconductive-Type Photodetectors

“…Proof-of-concept double-sided imaging has been realized based on two kinds of electronic eye prototypes (concave and convex hemispheres) in a single device configuration. Thus far, researchers have developed numerous photodetectors based on various 2DLMs spanning elemental semiconductors/semimetals [68][69][70][71][72], chalcogenides [73][74][75][76][77][78][79][80][81][82][83], nitrides [84], multi-elemental semiconductors [85][86][87][88][89][90][91][92], etc.…”