High-Detectivity and Broadband Photodetector Based on LiInP₂Se₆ Semiconductors

Abstract

Photodetectors with high-detectivity and broadband response have attracted tremendous interest in various optoelectronic applications. LiInP 2 Se 6 as an emerging 2D semiconductor exhibits significant potential in optoelectronic applications due to its suitable bandgap and low dark current. Herein, high-quality LiInP 2 Se 6 crystals were successfully grown by the chemical vapor transport (CVT) method, and LiInP 2 Se 6based photodetectors were fabricated with a typical metal−semiconductor−metal (MSM) structure. The photodetectors present outstanding performance with a high detectivity of 9.48 × 10 12 Jones and a large on/off ratio coming up to 10 2 under 532 nm illumination. Furthermore, the photoresponse wavelength range can be expanded from visible to nearinfrared (NIR) due to defect engineering, indicating the potential to realize broadband photodetection. These results demonstrate LiInP 2 Se 6 as an emerging 2D semiconductor for optoelectronic applications and a promising candidate for photodetection with high detectivity and broadband response.