Realizing omnidirectional self-powered photodetectors is central to advancing next-generation portable and smart photodetector systems. However, the traditional omnidirectional photodetector is typically achieved by integrating complex hemispherical microlens on multiple photodetectors, which makes the detection system cumbersome and restricts its application in the portable field. Here, facile and high-performance flexible omnidirectional self-powered photodetectors are achieved by solution-processed two-dimensional (2D) layered PbI2 nanoplates on transparent conducting substrates. Characterization of PbI2 nanoplates microstructural/compositional and their photodetection properties have been systematically characterized. Under the irradiation of a 405 nm laser, the photodetectors exhibit an impressively low dark current of 10–13 A, a high light on/off ratio up to 106, and a fast rise/decay response time of 2/3 ms. Importantly, when light irradiates the photodetector at 5°, it can still maintain high photodetection properties, realizing almost 360° omnidirectional self-powered photodetection. What is more, these self-powered photodetectors exhibit robust omnidirectional photoresponse stability of flexibility even after bending for 1200 cycles. Thus, this work broadens the applicability of 2D layered nanoplates for further extending its applications in advanced optoelectronic devices.
High-quality narrow bandgap semiconductors nanowires (NWs) challenge the flexible near-infrared (NIR) photodetectors in next-generation imaging, data communication, environmental monitoring, and bioimaging applications. In this work, complementary metal oxide semiconductor-compatible metal of Ag is deposited on glass as the growth catalyst for the surfactant-assisted chemical vapor deposition of GaSb NWs. The uniform morphology, balance stoichiometry, high-quality crystallinity, and phase purity of as-prepared NWs are checked by scanning electron microscopy, energy dispersive X-ray spectroscopy, high-resolution transmission electron microscopy, and X-ray diffraction. The electrical properties of as-prepared NWs are studied by constructing back-gated field-effect-transistors, displaying a high I on/I off ratio of 104 and high peak hole mobility of 400 cm2/(V·s). Benefiting from the excellent electrical and mechanical flexibility properties, the as-fabricated NW flexible NIR photodetector exhibits high sensitivity and excellent photoresponse, with responsivity as high as 618 A/W and detectivity as high as 6.7 × 1010 Jones. Furthermore, there is no obvious decline in NIR photodetection behavior, even after parallel and perpendicular folding with 1200 cycles.
The bias‐stress instability of nanowires (NWs) field‐effect‐transistors (FETs), originated from the surface trappings, are challenging greatly the functionalization of III‐V group semiconductors in next‐generation electronics and optoelectronics. In this study, the solution‐processed high‐κ oxide dielectric shell is configured uniformly onto the surface of GaSb NWs, contributing to the excellent bias‐stress stability of as‐constructed p‐type NWFETs. Owing to the interdiffusion between Al and Ga, the oxide dielectric shell is Ga‐AlOx. With an optimal oxide dielectric shell, the as‐constructed p‐type GaSb NWFETs show an insignificant attenuation of on‐state current (within 10%) and a negligible negative shift of threshold voltage under 60 min continuous gate bias, which is far better than that of pristine GaSb NWFETs, resulting from the electric double layer effect. Benefiting from the excellent bias‐stress stability, when configured into the near‐infrared photodetector, NWFET exhibits desirable stability and gate‐controlled photodetection behaviors. Idark and Ilight are effectively modulated by gate voltage, resulting in gate‐controlled responsivity and gain under the illumination of 1550 nm laser. In the end, the as‐constructed bias‐stress stability NWFET demonstrates expected gate‐controlled photodetection imaging and photocommunication ability. The strategy of solution‐processed oxide dielectric shell promises high bias‐stress stability NWFETs for gate‐controlled photodetection and photocommunication.
Power consumption makes next-generation large-scale photodetection challenging. In this work, the source-gated transistor (SGT) is adopted first as a photodetector, demonstrating the expected low power consumption and high photodetection performance. The SGT is constructed by the functional sulfur-rich shelled GeS nanowire (NW) and low-function metal, displaying a low saturated voltage of 0.61 V ± 0.29 V and an extremely low power consumption of 7.06 pW. When the as-constructed NW SGT is used as a photodetector, the maximum value of the power consumption is as low as 11.96 nW, which is far below that of the reported phototransistors working in the saturated region. Furthermore, benefiting from the adopted SGT device, the photodetector shows a high photovoltage of 6.6 × 10–1 V, a responsivity of 7.86 × 1012 V W–1, and a detectivity of 5.87 × 1013 Jones. Obviously, the low power consumption and excellent responsivity and detectivity enabled by NW SGT promise a new approach to next-generation, high-performance photodetection technology.
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