New Approach to Low-Power-Consumption, High-Performance Photodetectors Enabled by Nanowire Source-Gated Transistors

Abstract

Power consumption makes next-generation large-scale photodetection challenging. In this work, the source-gated transistor (SGT) is adopted first as a photodetector, demonstrating the expected low power consumption and high photodetection performance. The SGT is constructed by the functional sulfur-rich shelled GeS nanowire (NW) and low-function metal, displaying a low saturated voltage of 0.61 V ± 0.29 V and an extremely low power consumption of 7.06 pW. When the as-constructed NW SGT is used as a photodetector, the maximum value of the power consumption is as low as 11.96 nW, which is far below that of the reported phototransistors working in the saturated region. Furthermore, benefiting from the adopted SGT device, the photodetector shows a high photovoltage of 6.6 × 10–1 V, a responsivity of 7.86 × 1012 V W–1, and a detectivity of 5.87 × 1013 Jones. Obviously, the low power consumption and excellent responsivity and detectivity enabled by NW SGT promise a new approach to next-generation, high-performance photodetection technology.

Pyro-Phototronic Effect-Enhanced Photocurrent of a Self-Powered Photodetector Based on ZnO Nanofiber Arrays/BaTiO3 Films

“…Responsivity ( R ) and specific detectivity ( D *) are the critical parameters for UV detectors, which reflect the photoresponse ability of PDs to the light signals. The R and D * can be calculated as follows: , R = ( I light − I d ) / P S D * = R / false( 2e I d / S false) 0.5 where I light is the light current, I d is the dark current, e represents the electron charge, and S is the actual area of the heterojunction (1.05 × 10 –3 cm 2 calculated from Figure S5). As shown in Figure e, the maximum R of the ZnO-NFA/BTO PD is 1.41 mA W – 1 at 368 nm under 0 V, which is almost 1 × 10 3 times higher than that of BTO PD (0.2 V, 1.21 μA W – 1 ) and 10 times higher than ZnO-NFA PD (0.2 V, 126 μA W – 1 ) at 368 nm.…”

Enhancing the optoelectronic properties of solution-processed AgInSe2 thin films for application in photovoltaics

“…Inorganic semiconductors find utility in various optoelectronic applications ranging from photovoltaics to telecommunications, lighting, sensors, medical devices and others. [1][2][3][4][5][6][7][8][9] For the worldwide use of solar energy to lead to a green energy economy, we need photovoltaic materials that are low-cost, stable, have good optoelectronic and charge transport properties, and can be easily manufactured on a large scale. Thin-film solar cells show all these characteristics, some of which have surpassed the monocrystalline Si efficiency.…”

Toward High Bias‐Stress Stability P‐Type GaSb Nanowire Field‐Effect‐Transistor for Gate‐Controlled Near‐Infrared Photodetection and Photocommunication

“…[1][2][3][4] At the same time, infrared photodetectors constructed with narrow bandgap III-V group semiconductors NWFETs are also considered as the indispensable building blocks in the further photocommunication chips. [5][6][7][8][9] Before the further commercial functionalization, it is necessary to pay more attentions on the service-life stability and bias-stress stability properties of III-V group semiconductors NWFETs for realizing the best gate-controlled performances. [10,11] Because III-V group semiconductors NWs are easily oxidized, robust encapsulation technique by employing materials and structures that possess high barrier performance against the adverse environment is explored to prolong the service-life stability of NWFETs.…”

“…Therefore, decreased currents (I DS ) in backward sweeps are observed compared with that in forward sweeps in transfer curves, which lead to anticlockwise hysteresis in p-type FETs and clockwise hysteresis in n-type FETs. [8,11] In short, the instability phenomenon of anticlockwise/clockwise sloop in transfer characteristics, threshold voltage (V TH ) shift and on-state current (I on ) change etc. are always observed during the operation of NWFETs.…”