Enhancing the optoelectronic properties of solution-processed AgInSe₂ thin films for application in photovoltaics

Abstract

A solution-processed AgInSe2 film from dimethyl formamide–thiourea–chlorides chemistry with a high carrier lifetime of 9.2 ns and a PLQY of 0.0128% is reported.

Solution processed metal chalcogenide semiconductors for inorganic thin film photovoltaics

“…40 At the extreme of fully Ag-substituted AgInSe 2 , excellent optoelectronic properties have been observed but changes in carrier concentration require a new device architecture before high efficiency devices can be obtained. 89…”