Ag-catalyzed GaSb nanowires for flexible near-infrared photodetectors

Abstract

High-quality narrow bandgap semiconductors nanowires (NWs) challenge the flexible near-infrared (NIR) photodetectors in next-generation imaging, data communication, environmental monitoring, and bioimaging applications. In this work, complementary metal oxide semiconductor-compatible metal of Ag is deposited on glass as the growth catalyst for the surfactant-assisted chemical vapor deposition of GaSb NWs. The uniform morphology, balance stoichiometry, high-quality crystallinity, and phase purity of as-prepared NWs are checked by scanning electron microscopy, energy dispersive X-ray spectroscopy, high-resolution transmission electron microscopy, and X-ray diffraction. The electrical properties of as-prepared NWs are studied by constructing back-gated field-effect-transistors, displaying a high I on/I off ratio of 104 and high peak hole mobility of 400 cm2/(V·s). Benefiting from the excellent electrical and mechanical flexibility properties, the as-fabricated NW flexible NIR photodetector exhibits high sensitivity and excellent photoresponse, with responsivity as high as 618 A/W and detectivity as high as 6.7 × 1010 Jones. Furthermore, there is no obvious decline in NIR photodetection behavior, even after parallel and perpendicular folding with 1200 cycles.

Toward High Bias‐Stress Stability P‐Type GaSb Nanowire Field‐Effect‐Transistor for Gate‐Controlled Near‐Infrared Photodetection and Photocommunication

“…Here, high-quality GaSb NWs are pre-pared by using the surfactant-assisted chemical vapor deposition (CVD) method as previous reported. [37,38] The detailed growth process can be found in Experiment Section. From the scanning electron microscopy (SEM) image and X-ray diffraction (XRD) pattern in Figure S1 (Supporting Information), the as-prepared samples are uniform GaSb NWs with high density, smooth surface and pure zinc blende crystal structure (JCPDS Card No.…”

“…07-0215). [37][38][39] The details of solution-processed AlO x treated GaSb NW are then shown in Figure 1a. In short, after growth, GaSb NWs are dispersed and dipped in the precursor solution of Al(NO 3 ) 3 •9H 2 O and then transferred to the Si/SiO 2 substrates for a low-temperature combustion synthesis at 300 °C on a hotplate.…”

“…[11,20,34] As a typical III-V group semiconductor, GaSb has a high hole mobility of 1000 cm 2 V −1 s −1 and narrow direct bandgap of 0.72 eV, which is considered as a competitive channel semiconductor for next-generation optoelectronic devices. [35][36][37] In this work, solution-processed AlO x dielectric is used to passivate the surface charge trappings of GaSb NWs, followed by the systematically investigation on the bias-stress stability property and further gate-controlled photodetection behaviors. Without surface passivation, GaSb NWFETs exhibit gate voltage sweeping rate and sweeping range dependent hystereses.…”

Photoresponse Improvement of InGaAs Nanowire Near-Infrared Photodetectors with Self-Assembled Monolayers

“…Near-infrared (NIR) photodetectors have a significantly important practical value in the application fields of telecommunications, biosensing, medical imaging, space monitoring, etc. − With the increasing demands for versatile optoelectronic applications, nanoscale photodetectors with superior detection performance, high sensitivity, and mechanical flexibility are extensively researched. − In the past decade, one-dimensional semiconductor nanowires (NWs), especially III–V compound NWs, have attracted considerable research attention for high-performance photodetectors due to their high carrier mobility, large surface-to-volume ratio, direct bandgap, excellent flexibility, and superior photoresponsibility in photoelectric detection. − In particular, ternary In x Ga 1– x As NWs are considered as promising candidates for integrated IR optoelectronic applications owing to their potential bandgap tunability from the NIR to the IR region (0.34–1.42 eV) at room temperature. − However, the large number of unstable surface states on InGaAs NWs cause nonradiative (NR) emissions, delay the response time of the devices, and limit the photocurrent, which remains a problem that cannot be ignored.…”

Gate-Tunable Responsivity of PdSe2 Nanosheet-Based Bolometric Photodetectors for Mid-Infrared Light Detection

“…Infrared detectors can be categorized into photoconductive (including photogating effect), photovoltaic, photothermoelectric, bolometric, and pyroelectric detectors based on their operation principle . Notably, bolometric photodetectors can achieve wide spectral response at room temperature, which makes it widely used in infrared imaging, thermometry, and thermal accelerometers. – The working principle of bolometric photodetectors is based on the changes in resistance of the sensing material with temperature upon light irradiation, which is characterized by the temperature coefficient of resistance (TCR). – 2D materials have been found to possess large TCRs and a small heat capacity, which are thus promising candidates for use in high-performance bolometers. For example, Yuan et al demonstrated that high-quality graphene is an ideal high-speed bolometric material due to its broadband absorption, small heat capacity, and large TCR of approximately 1% K –1 .…”