High performance dual-gate SiGe MOSFET for radio-frequency applications

Adhikari, Manoj Singh; Patel, Raju; Singh, Yashvir

doi:10.1016/j.aeue.2019.152838

Cited by 9 publications

(10 citation statements)

References 37 publications

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“…Figure 3 compares the I D ‐ V GS characteristics of conventional MOSFET, Side Drain DGMOS 21 (SD DGMOS), and L‐shaped Drain DGMOS (LD DGMOS). The figure shows that the LD DGMOS structure exhibits the highest drain current values among the three for the ON state of MOS devices.…”

Section: Resultsmentioning

confidence: 99%

“…We proposed a new SiGe channel DG MOS structure with an L‐shaped drain. Its performance is compared with conventional MOS and recently presented 21 Side Drain DG‐MOS structure. We showed that the LD‐DGMOSFET exhibits a more uniform vertical distribution of driving field in the resistive drain region of the device, leading to better carrier transport than its side drain variant.…”

Section: Discussionmentioning

confidence: 99%

“…An L‐shaped drain Si 0.6 Ge 0.4 n‐channel double gate MOSFET structure has been proposed. This device architecture has been comparatively studied with the conventional Si 0.6 Ge 0.4 channel MOSFET and the recently published 21 Si 0.6 Ge 0.4 n‐channel double gate side drain architecture (SD DGMOS). The device parameters used in the present work are summarized in Table 1.…”

Section: Device Structure and Simulation Detailsmentioning

confidence: 99%

“…Being a planar device, its fabrication is not complicated, but having a conventional geometry, it does not show significant performance improvement from its successor. The side drain architecture has proved to be a strong effort in this direction 21 . It has been proven that despite having a simple planar geometry, the side drain architecture exhibits better performance than the popular transistor architectures.…”

Section: Introductionmentioning

confidence: 99%

“…For this reason, this process of performance improvement appears to be complex and demands a comprehensive study of the physics and electronics of device architectures. For the same purpose, the SiGe Channel Trenched Double Gate Side Drain MOSFET (SD DGMOS) architecture was recently introduced, exhibiting excellent performance parameters compared to popular MOS structures 21 . Advancing in the same direction, the SiGe channeled, trenched double gate, L shape Drain architecture (LD DGMOS), is proposed to improve device parameters further.…”

Section: Introductionmentioning

confidence: 99%

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Novel L‐shaped drain dual‐gateSiGe MOSFETforhigh‐frequency, low power applications

Yadav

Negi

2022

Int J Numerical Modelling

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In this work, vertically trenched double gate architecture has been investigated, in which the gates are implemented inside vertical oxide trenches. Besides, a silicon‐germanium channel dual‐gate MOSFET with unconventional L‐shaped drain architecture is proposed to improve device performance further. We have shown that the proposed device is the first‐of‐its‐kind device architecture that controls short channel effects and markedly improves transistor performance. Here, The Atlas 2D device simulator has been used to analyze the performance of the devices. At nanoscaled device dimensions, the proposed L‐shaped DG MOS device demonstrated superior ON current characteristics, higher values of transconductance, larger unity gain cut off frequencies, greater Ion to Ioff ratios, higher gain, lower parasitic capacitance, greater transconductance to drain conductance ratio, suppressed drain induced barrier lowering (DIBL), and lower subthreshold swing (S.S.), in comparison to the recently presented Double Gate MOS with unconventional side drain architecture. All these intriguing features demonstrated by the proposed transistor structure make it a potential candidate for low‐power, high‐frequency applications.

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Section: Resultsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Section: Device Structure and Simulation Detailsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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