Novel L‐shaped drain dual‐gateSiGe MOSFETforhigh‐frequency, low power applications

Abstract

In this work, vertically trenched double gate architecture has been investigated, in which the gates are implemented inside vertical oxide trenches. Besides, a silicon‐germanium channel dual‐gate MOSFET with unconventional L‐shaped drain architecture is proposed to improve device performance further. We have shown that the proposed device is the first‐of‐its‐kind device architecture that controls short channel effects and markedly improves transistor performance. Here, The Atlas 2D device simulator has been used to analyze the performance of the devices. At nanoscaled device dimensions, the proposed L‐shaped DG MOS device demonstrated superior ON current characteristics, higher values of transconductance, larger unity gain cut off frequencies, greater Ion to Ioff ratios, higher gain, lower parasitic capacitance, greater transconductance to drain conductance ratio, suppressed drain induced barrier lowering (DIBL), and lower subthreshold swing (S.S.), in comparison to the recently presented Double Gate MOS with unconventional side drain architecture. All these intriguing features demonstrated by the proposed transistor structure make it a potential candidate for low‐power, high‐frequency applications.