56th Annual Device Research Conference Digest (Cat. No.98TH8373)
DOI: 10.1109/drc.1998.731113
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High performance CMOS compatible bistable operation at extremely low supply voltage by a novel Si interband tunneling diode

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Cited by 3 publications
(2 citation statements)
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“…The Si-IBTD fabrication indicated full process compatibility with conventional Si MOSFET processing. Furthermore, we achieved a CMOS-compatible bistable operation at extremely low voltage with two series of Si-IBTDs [6].…”
Section: Introductionmentioning
confidence: 98%
“…The Si-IBTD fabrication indicated full process compatibility with conventional Si MOSFET processing. Furthermore, we achieved a CMOS-compatible bistable operation at extremely low voltage with two series of Si-IBTDs [6].…”
Section: Introductionmentioning
confidence: 98%
“…Recently however, CMOS-compatible interband tunnel diodes have been demonstrated (8,9) and show that a wide range of current-densities can be obtained spanning the range from 10 -6…”
Section: A Memory Cellsmentioning
confidence: 99%