Transistors and tunnel diodes for analog/mixed-signal circuits and embedded memory

Abstract

An integrated tunnel diode/transistor process can be used to increase the speed of signal processing circuitry or reduce power at the same speed; in memory applications, tunnel diodes can be used to reduce static power dissipation (>20× in Si, >1000× in III-V materials) relative to conventional approaches. This paper summarizes recent progress in InP and Si-based tunnel diodes 1 and circuits.

Is nanoelectronics the future of microelectronics?

“…Another example of how unconventional technologies can be combined with conventional technology are integrated tunnel diode/transistors [27]. The negative differential resistance provides at least two stable bias points, which could be utilized for highspeed signal processing or for low power memory [27,28].…”

Modelisation of optoelectronic device based on Si/SiO2 emitting red light

“…Resonant tunneling has been intensively investigated in III-V semiconductors (SCs) since the pioneering work of Chang et al [1] and now, resonant tunneling diodes (RTDs) are a mature technology in the III-V system with many demonstrations of memory [2] and logic circuits [3]. In II-VI semiconductors, resonant tunneling has been realized in narrow-gap [4] and in wide-gap [5] systems.…”

A monolithically integrated Si interband tunneling diode (IBTD)/MOSFET memory for ultra low voltage operation below 0.5 V

“…In III-V material systems, resonant-tunneling diodes (RTD) /transistor integrated circuits have been demonstrated for signal processing and memory applications with high performance, such as ultra-low static power and reduction of circuit complexity [1][2][3]. Many attempts have also been made to develop an integrable Si-based tunnel diode with standard Si technology.…”