Field-Induced Interband Tunneling Effect Transistor (FITET) With Negative-Differential Transconductance and Negative-Differential Conductance

Kim, Kyung Rok; Kim, Hyun Ho; Song, Ki–Whan; Huh, Jung Im; Lee, Jong Duk; Park, Byung‐Gook

doi:10.1109/tnano.2005.847008

Cited by 14 publications

(11 citation statements)

References 15 publications

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“…3(b). This phenomenon is usually named the negative transconductance (NTC) effect and is well known for inorganic devices based on semiconducting heterostructures, 36,37 while it has been reported and discussed very rarely for organic-based devices. A peculiar electrical behavior with some similarities to our experimental findings has been recently observed in the transfer current-voltage characteristics of double-layered field-effect polymer transistors.…”

Section: B Gate Voltage Effect On Heterostructure Energetics: the Ntmentioning

confidence: 99%

Ambipolar transport and charge transfer at the interface between sexithiophene and N,N-bis(n-octyl)-dicyanoperylenediimide films

et al. 2012

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Heterostructures obtained by combining p-type and n-type organic semiconductors are attracting considerable attention for the interesting physical phenomena arising at organic/organic interfaces, as well as for their potential application in ambipolar field-effect transistors. Here we report on the observation of an interfacial charge transfer effect in high-quality sexithiophene (T6)/N,N-bis(n-octyl)-dicyanoperylenediimide (PDI-8CN 2 ) heterostructures, fabricated in situ by a controlled sequential evaporation of T6 and PDI-8CN 2 thin films on Si/SiO 2 substrates. The electrical characterization of several heterostructures as a function of the thickness of each film shows that the hole and electron transport cannot be explained by invoking only the properties of the individual layers. Electrical characterization and nonlinear optical spectroscopy give clear indications of charge transfer between T6 and PDI-8CN 2 layers, accompanied by band offset and interfacial charge accumulation (heterojunction effect) at the organic/organic interface. Signatures of such effect were the enhancement of drain-source current at zero gate voltage, a shift of gate threshold voltage in transfer curves, and an enhanced second-harmonic generation related to a built-in interfacial electric field. Gate-voltage-tunable negative transconductance has been also observed in heterostructures composed by thin T6 layers and explained in terms of gate-voltage-tunable recombination phenomena occurring in the hole/electron accumulation layer.

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Section: B Gate Voltage Effect On Heterostructure Energetics: the Ntmentioning

confidence: 99%

Ambipolar transport and charge transfer at the interface between sexithiophene and N,N-bis(n-octyl)-dicyanoperylenediimide films

et al. 2012

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“…Indeed, this has been experimentally demonstrated in CNTs [22][23][24] and more recently with a silicon based BTBT FET [25]. BTBT occurs in two different transistor geometries; a popular p-i-n geometry reported in [5-9, 11, 13, 15-18, 20, 21, 24, 25] (hereafter called the TFET), and the conventional MOSFET geometry used in [12,19,22,23]. In the case of CNT-MOSFETs [22,23] it has been established that BTBT is dominated by phonon assisted inelastic tunneling that severely deteriorates the device characteristics [19,26].…”

Section: Introductionmentioning

confidence: 99%

Performance Comparison Between p-i-n Tunneling Transistors and Conventional MOSFETs

Koswatta

Lundstrom

Nikonov

2009

IEEE Trans. Electron Devices

395

156

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Field-effect transistors based on band-to-band tunneling (BTBT) have gained a lot of recent interest due to their potential for reducing power dissipation in integrated circuits. In this paper we present a detailed performance comparison between conventional n-i-n MOSFET transistors, and BTBT transistors based on the p-i-n geometry (p-i-n TFET), using semiconducting carbon nanotubes as the model channel material. Quantum transport simulations are performed using the nonequilibrium Green's function formalism including realistic phonon scattering. We find that the TFET can indeed produce subthreshold swings below the conventional MOSFET limit of 60mV/decade at room temperature leading to smaller off-currents and standby power dissipation. Phonon assisted tunneling, however, limits the off-state performance benefits that could have been achieved otherwise. Under on-state conditions the drive current and the intrinsic device delay of the TFET are mainly governed by the tunneling barrier properties. On the other hand, the switching energy for the TFET is observed to be fundamentally smaller than that for the MOSFET, reducing the dynamic power * Email address: koswatta@purdue.edu 1 dissipation. Aforementioned reasons make the p-i-n geometry well suited for low power applications.I.

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“…Since the first discover of NDR characteristics in Esaki tunnel diode with heavily doped pn junction based on germanium material [1], there have been in problem for practical applications owing to low peak-tovalley current ratio (PVCR) below 10 by the trap-assisted tunneling (TAT) current through forbidden band-gap [2,3]. For the improvement of PVCR over 100, many research works have been reported focusing on the metal-oxide-semiconductor field-effect transistor (MOSFET) structure instead of simple tunnel diode.…”

Section: Introductionmentioning

confidence: 99%

Negative Differential Resistance Devices with Ultra-High Peak-to-Valley Current Ratio and Its Multiple Switching Characteristics

Shin¹,

Kang²,

Kim³

2013

JSTS:Journal of Semiconductor Technology and Science

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Abstract-We propose a novel negative differential resistance (NDR) device with ultra-high peak-tovalley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over 10 4 at low operation voltage of 0.5 V in a single peak and valley current.

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Field-Induced Interband Tunneling Effect Transistor (FITET) With Negative-Differential Transconductance and Negative-Differential Conductance

Cited by 14 publications

References 15 publications

Ambipolar transport and charge transfer at the interface between sexithiophene and N,N-bis(n-octyl)-dicyanoperylenediimide films

Ambipolar transport and charge transfer at the interface between sexithiophene and N,N-bis(n-octyl)-dicyanoperylenediimide films

Performance Comparison Between p-i-n Tunneling Transistors and Conventional MOSFETs

Negative Differential Resistance Devices with Ultra-High Peak-to-Valley Current Ratio and Its Multiple Switching Characteristics

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