Negative Differential Resistance Devices with Ultra-High Peak-to-Valley Current Ratio and Its Multiple Switching Characteristics

Abstract

Abstract-We propose a novel negative differential resistance (NDR) device with ultra-high peak-tovalley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over 10 4 at low operation voltage of 0.5 V in a single peak and valley current.

Novel five-state latch using double-peak negative differential resistance and standard ternary inverter

“…13,14) For the multiple NDR device satisfying ultrahigh PVCR, simple structure, and low operation voltage, the pn tunnel junction-embedded silicon (Si) nanowire (NW) structure has been presented with ultrahigh PVCR over 10 4 at 1 V under the two independent input biases [gate (V G ) and drain (V D )] in our previous works. 15,16) In addition, we proposed further improved and practical NDR device based on pn tunnel junction-embedded conventional Si MOSFET structure having a single input bias (V IN ) and compatibility with CMOS process, which still maintained its outstanding characteristics of multiple peak and ultrahigh PVCR over 10 6 at 1 V. 17) In this paper, we propose a novel five-state latch with complement double-peak NDR devices and standard ternary inverter (STI) using only four devices. In Sect.…”

Multiple negative differential resistance devices with ultra-high peak-to-valley current ratio for practical multi-valued logic and memory applications

“…15,16) For the multiple NDR device satisfying both ultra-high PVCR and low operation voltage, the pn tunnel junctionembedded silicon (Si) nanowire (NW) structure has been presented with ultra-high PVCR over 10 4 at 1 V under the two independent input biases in our previous works. 17,18) In this paper, we propose further improved and practical NDR device based on pn tunnel junction-embedded conventional Si MOSFET structure having a single input bias and compatibility with CMOS process, which still maintains its outstanding characteristics of multiple peak and ultra-high PVCR over 10 6 at 1 V. In Sect. 2, the device operation principle and multiple switching characteristics will be explained based on the energy band diagram.…”