High Mobility Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor by Aluminum Oxide Passivation Layer

Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer

“…AOS materials have been reported to suffer from reliability degradation, and research has indicated that the instability can be related to the interaction of the backchannel surface and the ambient atmosphere. 21 Many attempts have been made to improve the reliability issue. However, the mobility is sacrificed in these cases.…”

“…In addition, some research reports have indicated that oxygen vacancies should be introduced as excess carriers into the channels or backside channel interface by passivation layer deposition, which may be used as a method of enhancing the electrical mobility characteristics. [19][20][21][22] Besides, there are some explanations regarding this mobility enhancement phenomenon, like an increase in tensile stress-induced oxygen vacancies, 19 hydrogen generation from the precursor during the deposition process, 20 and even generation of metallic indium by ion bombardment in a typical plasma-based deposition process. 21 On the other hand, a TFT device with an oxygen-rich bi-layer channel structure has been proposed to suppress the excess oxygen vacancies introduced at the backside channel interface aer the formation of the passivation layer by a typical plasma-based deposition process, which also improved the device mobility by lowering bulk trap-induced carrier scattering.…”

“…[19][20][21][22] Besides, there are some explanations regarding this mobility enhancement phenomenon, like an increase in tensile stress-induced oxygen vacancies, 19 hydrogen generation from the precursor during the deposition process, 20 and even generation of metallic indium by ion bombardment in a typical plasma-based deposition process. 21 On the other hand, a TFT device with an oxygen-rich bi-layer channel structure has been proposed to suppress the excess oxygen vacancies introduced at the backside channel interface aer the formation of the passivation layer by a typical plasma-based deposition process, which also improved the device mobility by lowering bulk trap-induced carrier scattering. 23 Hence, the mechanism behind the oxygen vacancy and passivation effect has not been clearly disclosed and is worthy of further investigation.…”

Interface Engineering of Metal‐Oxide Field‐Effect Transistors for Low‐Drift pH Sensing

“…[33] On the other hand, Al 2 O 3 passivation layer on the back channel can greatly increase the carrier concentration and enhance the channel conductivity, leading to a negatively shifted V th and an increased mobility. [42] The output characteristics of Al 2 O 3 /In 2 O 3 interfaces based FETs are illustrated in Figure 2c, showing clear pinch-off behaviors.…”

All-Sputtering, High-Transparency, Good-Stability Coplanar Top-Gate Thin Film Transistors

“…Traditional bottom gate TFTs show a large V th shift under bias due to a donor effect of charged chemisorbed H 2 O or O 2 molecules in the back-channel region [5]. Therefore, a passivation layer is essential for preventing the active layer from experiencing the ambient impact [6]. However, top-gate structure TFTs have attracted lots of attention with the merits of being self-passivated and compatible with the AMOLED process [7,8].…”