All-Sputtering, High-Transparency, Good-Stability Coplanar Top-Gate Thin Film Transistors

Chen, Jianqiu; Huang, Xiuqi; Li, Qunjie; Fang, Zhiqiang; Ning, Honglong; Tao, Ruiqiang; Liang, Hongfu; Zhou, Yicong; Yao, Rihui; Peng, Junbiao

doi:10.3390/app9010083

Cited by 3 publications

(2 citation statements)

References 23 publications

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“…Both the TFT-Al and TFT-Cu exhibit normally on switching characteristic with a negative V th , which means residual free electron carrier transport from the source to drain electrode when without gate modulation voltage. The representative electrical parameters extracted from Figure 2(d) and parameters of NdIZO-TFT from other literatures are shown in Table 1 [ 38 , 39 ]. On the whole, our work shows better performance due to reasonable process parameters than other literatures.…”

Section: Resultsmentioning

confidence: 99%

Alloy-Electrode-Assisted High-Performance Enhancement-Type Neodymium-Doped Indium-Zinc-Oxide Thin-Film Transistors on Polyimide Flexible Substrate

Yao

et al. 2021

Research

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Flexible thin-film transistors with high current-driven capability are of great significance for the next-generation new display technology. The effect of a Cu-Cr-Zr (CCZ) copper alloy source/drain (S/D) electrode on flexible amorphous neodymium-doped indium-zinc-oxide thin-film transistors (NdIZO-TFTs) was investigated. Compared with pure copper (Cu) and aluminum (Al) S/D electrodes, the CCZ S/D electrode changes the TFT working mode from depletion mode to enhancement mode, which is ascribed to the alloy-assisted interface layer besides work function matching. X-ray photoelectron spectroscopy (XPS) depth profile analysis was conducted to examine the chemical states of the contact interface, and the result suggested that chromium (Cr) oxide and zirconium (Zr) oxide aggregate at the interface between the S/D electrode and the active layer, acting as a potential barrier against residual free electron carriers. The optimal NdIZO-TFT exhibited a desired performance with a saturation mobility (μsat) of 40.3 cm2·V-1·s-1, an Ion/Ioff ratio of 1.24×108, a subthreshold swing (SS) value of 0.12 V·decade-1, and a threshold voltage (Vth) of 0.83 V. This work is anticipated to provide a novel approach to the realization of high-performance flexible NdIZO-TFTs working in enhancement mode.

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Section: Resultsmentioning

confidence: 99%

Alloy-Electrode-Assisted High-Performance Enhancement-Type Neodymium-Doped Indium-Zinc-Oxide Thin-Film Transistors on Polyimide Flexible Substrate

Yao

et al. 2021

Research

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“…Additionally, the deteriorated PBS stabilities of IGTO TFTs prepared at higher oxygen partial pressures were attributed to a larger number of interface electron trap states originating from the oxygen vacancies (V O ). However, considering that V O is mainly related to the negative bias illumination stress (NBIS) stability in IGZO and IGTO TFTs, it is necessary to examine whether this interpretation is accurate [21][22][23][24][25][26][27][28]. Consequently, in this study, we examined the effects of oxygen content on the transfer characteristics and stabilities of high-mobility IGTO TFTs during channel layer deposition.…”

Section: Introductionmentioning

confidence: 99%

Effects of Oxygen Content on Operational Characteristics and Stability of High-Mobility IGTO Thin-Film Transistors during Channel Layer Deposition

et al. 2021

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In this study, we investigated the effects of oxygen content on the transfer characteristics and stability of high-mobility indium-gallium-tin oxide (IGTO) thin-film transistors (TFTs) during channel layer deposition. The IGTO thin films were deposited through direct current sputtering at different ambient oxygen percentages of 10%, 20%, 30%, 40%, and 50%. The experimental results indicate that the drain currents were hardly modulated by the gate-to-source voltage in the IGTO TFT prepared at 10% ambient oxygen. However, as the oxygen content increased from 20% to 50%, the transfer curves shifted to the positive direction with a decrease in field-effect mobility (μFE). The IGTO TFTs exhibited deteriorated positive bias stress (PBS) stability as the oxygen content increased. However, the stabilities of the IGTO TFTs under negative bias illumination stress (NBIS) improved with an increase in the ambient oxygen percentage during the channel layer deposition. Furthermore, to understand the mechanism of the observed phenomena, we performed X-ray photoelectron spectroscopy (XPS) analysis of the IGTO thin films prepared at different oxygen percentages. The XPS results demonstrate that the deteriorated PBS stability and enhanced NBIS stability of the IGTO TFTs prepared at higher oxygen percentages were mainly ascribed to the larger amount of oxygen interstitials resulting from the excess oxygen and the smaller number of oxygen vacancies within the IGTO, respectively. The obtained results suggest that the oxygen percentages of 30% in the sputtering ambient is the most suitable oxygen percentage for optimizing the electrical properties (μFE = 24.2 cm2/V·s, subthreshold swing = 0.43 V/dec, and threshold voltage = −2.2 V) and adequate PBS and NBIS stabilities of IGTO TFTs.

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Embedded Reverse-Offset Printing of Silver Nanowires and Its Application to Double-Stacked Transparent Electrodes with Microscale Patterns

Kim

Won

Seo

et al. 2021

ACS Appl. Mater. Interfaces

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We propose an embedded reverse-offset printing (EROP) method, which generates silver nanowire (AgNW) transparent electrodes for display applications. The proposed EROP method can solve the two critical issues of microscale pattern formation and surface planarization. The AgNW electrode had a transmittance of 82% at 550 nm, a sheet resistance of 12.2 Ω/sq, and a 3.27 nm smooth surface. We realized the roll-based pattern formation of AgNW on a plastic substrate as small as 10 μm with negligible step differences to facilitate the proposed method. The proposed EROP method also produced a double-stacked AgNW electrode, enabling the simultaneous operation of separately micropatterned devices. To verify the usefulness of EROP, we fabricated an organic light-emitting diode (OLED) device to demonstrate leakage current reduction and efficiency improvement compared with a conventional indium tin oxide (ITO)-based OLED device. The EROP-based OLED showed 38 and 25% higher current efficiencies than an insulator-patterned AgNW OLED and a conventional ITO-based OLED, respectively.

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All-Sputtering, High-Transparency, Good-Stability Coplanar Top-Gate Thin Film Transistors

Cited by 3 publications

References 23 publications

Alloy-Electrode-Assisted High-Performance Enhancement-Type Neodymium-Doped Indium-Zinc-Oxide Thin-Film Transistors on Polyimide Flexible Substrate

Alloy-Electrode-Assisted High-Performance Enhancement-Type Neodymium-Doped Indium-Zinc-Oxide Thin-Film Transistors on Polyimide Flexible Substrate

Effects of Oxygen Content on Operational Characteristics and Stability of High-Mobility IGTO Thin-Film Transistors during Channel Layer Deposition

Embedded Reverse-Offset Printing of Silver Nanowires and Its Application to Double-Stacked Transparent Electrodes with Microscale Patterns

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