The lifetime of the organic devices remains a major challenge that must be overcome before the wide application of white organic light‐emitting diodes (WOLEDs) technology. In this work, we present a new strategy to achieve WOLEDs with an extremely long lifetime by wisely control of the recombination zone. A blue emitting layer of 6,6′‐(1,2‐ethenediyl)bis(N‐2‐naphthalenyl‐N‐phenyl‐2‐naphthalenamine doped 9‐(1‐naphthyl)‐10‐(2‐naphthyl)‐anthracene was deposited on top of the mixed host blue emitting layer to prevent hole penetration into the electron transporting layer and to attain better confinement of carrier recombination. In this way, we obtained a WOLED with a record high lifetime of over 150 000 hours at an initial brightness of 1000 cd m−2, 40 times longer than the conventional bilayer WOLED. The electroluminescent spectra of the long‐lived WOLED showed almost no color‐shifting after accelerated aging. It is anticipated that these results might be a starting point for further research towards ultrastable OLED displays and lightings.
Recently, rigid AMOLED display industry has stepped into mass production stage progressively. Meanwhile, flexible display has attracted more attention for its great potential to generate novel product market. However, when it comes to the mass production, flexible AMOLED display still faces quite a few technological challenges. In this paper, a 4.6-inch AMOLED display which can be rolled up under bending radius less than 3mm has been demonstrated, using process compatible to the current rigid AMOLED mass production line.
Fascinating features of porous InP array-directed assembly of InAs nanostructures are presented. Strained InAs nanostructures are grown by molecular-beam epitaxy on electrochemical etched porous InP substrate. Identical porous substrate with different pore depths defines different growth modes. Shallow pores direct the formation of closely spaced InAs dots at the bottom. Deep pores lead to progressive covering of the internal surface of pores by epitaxial material followed by pore mouth shrinking. For any depth an obvious dot depletion feature occurs on top of the pore framework. This growth method presages a pathway to engineer quantum-dot molecules and other nanoelements for fancy physical phenomena.
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