High-k dielectrics by UV photo-assisted chemical vapour deposition

Fang, Q.; Zhang, J. Y.; Wang, Z. M.; He, Guanghu; Yu, J.J.; Boyd, Ian W.

doi:10.1016/s0167-9317(02)00974-7

Cited by 20 publications

(8 citation statements)

References 21 publications

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“…The d-spacing values of nanocomposite rods were measured as 0.343 nm and 0.339 nm for 500°C and 600°C respectively. These d-spacing values are exactly coinciding with XRD d-spacing values [18].…”

Section: Particle Size Analyzersupporting

confidence: 83%

Synthesis and Characterization of MgO/TiO2 Nanocomposites

Ashok¹,

K²,

Chidurala³

2015

J Nanomed Nanotechnol

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The nanostructured material properties were showing surprisingly different from the bulk materials. Among these nanostructured materials nanocomposites are of great technological importance because of their small size and high surface to volume ratio. Due to these reason the nanocomposites were used in various potential applications such as optoelectronics, microelectronics, water purification, paints, biomedical field and different sensor fabrication. Present work concentrates on synthesis and characterization of MgO/TiO 2 nanocomposites by Microwave-assisted method using ionic liquid as the initial precursor and different temperature effects were investigated on it. The obtained MgO/ TiO 2 nanocomposites have been characterized by X-Ray Diffraction (XRD), particle size analyser (PSA), transmission electron microscopy (TEM), Fourier transform infrared spectrometer (FTIR), thermo gravimetric/differential thermal analyzer (TG/DTA) and Keithley electric meter for average crystallite size, average particle size, morphological studies, bond analysis, thermal stability and resistance respectively.

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Section: Particle Size Analyzersupporting

confidence: 83%

Synthesis and Characterization of MgO/TiO2 Nanocomposites

Ashok¹,

K²,

Chidurala³

2015

J Nanomed Nanotechnol

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“…Overall, they can be categorized into two major approaches based on the reaction mechanism during the preparation: CVD and PVD-based process. CVD-based approaches mainly include metalorganic chemical vapor deposition (MOCVD) [70,71], plasma-enhanced chemical vapor deposition (PECVD) [72,73], atomic-layer chemical vapor deposition (ALCVD) [74][75][76][77][78][79], and photo-assisted CVD synthesis [80][81][82][83][84]. These growth methods provide more flexible synthesis process and an alternative to achieve lower cost.…”

Section: Methods To Deposit High-k Gate Dielectricsmentioning

confidence: 99%

Integrations and challenges of novel high-k gate stacks in advanced CMOS technology

Zhu

Sun

et al. 2011

Progress in Materials Science

134

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“…While the SiO2 and SiN films produced by both methods exhibited comparable electrical and optical properties to those for films produced by plasma-enhanced CVD methods, 497,555,556,557,558 the later became the dominant method within the industry for deposition of intra-and inter-metal electrical isolation layers. 559 Photo-assisted deposition methods have also been explored for more front-end-of-line (FEOL) related applications such as low temperature growth of SiO2 535,560,561 and high- oxide 562 gate dielectric materials on semiconductors such as Si, 535,559,560,561 SiC, 563 GaAs, 564 InP, 565 and GaN 566 . Here again, photo-assisted deposition has shown promise for gate dielectric applications, but has to date yet to displace pure thermally driven processes.…”

Section: V32 Uv-assisted Film Depositionmentioning

confidence: 99%

Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

Baklanov

Jousseaume

Рахимова

et al. 2019

Applied Physics Reviews

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This paper presents an in-depth overview of the application and impact of UV/VUV light in advanced interconnect technology. UV light application in BEOL historically was mainly motivated by the need to remove organic porogen and generate porosity in organosilicate (OSG) low-k films. Porosity lowered the film's dielectric constant, k, which enables one to reduce the interconnect wiring capacitance contribution to the RC signal delay in integrated circuits. The UV-based low-k film curing (λ > 200 nm) proved superior to thermal annealing and electron beam curing. UV and VUV light also play a significant role in plasma-induced damage to pSiCOH. VUV light with λ < 190–200 nm is able to break Si-CH3 bonds and to make low-k materials hydrophilic. The following moisture adsorption degrades the low-k properties and reliability. This fact motivated research into the mechanisms of UV/VUV photon interactions in pSiCOH films and in other materials used in BEOL nanofabrication. Today, the mechanisms of UV/VUV photon interactions with pSiCOH and other films used in interconnect fabrication are fairly well understood after nearly two decades of research. This understanding has allowed engineers to both control the damaging effects of photons and utilize the UV light for material engineering and nanofabrication processes. Some UV-based technological solutions, such as low-k curing and UV-induced stress engineering, have already been widely adopted for high volume manufacturing. Nevertheless, the challenges in nanoscaling technology may promote more widespread adoption of photon-assisted processing. We hope that fundamental insights and prospected applications described in this article will help the reader to find the optimal way in this wide and rapidly developing technology area.

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High-k dielectrics by UV photo-assisted chemical vapour deposition

Cited by 20 publications

References 21 publications

Synthesis and Characterization of MgO/TiO2 Nanocomposites

Synthesis and Characterization of MgO/TiO2 Nanocomposites

Integrations and challenges of novel high-k gate stacks in advanced CMOS technology

Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

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