High gain GaAs 10Gbps transimpedance amplifier with integrated bondwire effects

Madureira, M.A.M.; Monteiro, Pedro; Aguiar, Rui L.; Violas, Manuel; Gloanec, M.; Leclerc, Éric; Lefebvre, B.

doi:10.1109/iscas.2003.1205924

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Optical Communication Systems1

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Cited by 4 publications

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“…High-bandwidth transimpedance GaAs MMIC receivers suitable for 10 Gbit/s and 40 Gbit/s data transmission rates were also designed and characterized [28,29]. The designed circuits were implemented using a MMIC PH15 process from United Monolithic Semiconductors (UMS).…”

Section: Optical Communication Systemsmentioning

confidence: 99%

Optical Communications Research at Institute of Telecommunications

Rocha¹,

Cartaxo²,

Silva³

et al. 2005

Fiber and Integrated Optics

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Section: Optical Communication Systemsmentioning

confidence: 99%

Optical Communications Research at Institute of Telecommunications

Rocha¹,

Cartaxo²,

Silva³

et al. 2005

Fiber and Integrated Optics

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“…Traditionally, such front-end circuits are implemented using III-V technologies due to their speed and noise advantages. There have been plenty of integrated circuits/devices implemented in III-V, Si Bipolar and SiGe technologies for 10Gb/s optical communication applications [30][31][32][33][34][35][36]. With these high-performance technologies, optical circuits/devices for even higher data rate operations (e.g.…”

Section: List Of Figuresmentioning

confidence: 99%