High-gain and low-threshold InAs quantum-dot lasers on InP

Caroff, Philippe; Paranthoën, Cyril; Platz, Charly; Dehaese, Olivier; Folliot, Hervé; Bertru, Nicolas; Labbé, Christophe; Piron, Rozenn; Homeyer, Estelle; Corre, Alain Le; Loualiche, Slimane

doi:10.1063/1.2146063

Cited by 128 publications

(86 citation statements)

References 15 publications

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“…Broad-area lasers were tested at different temperatures from 110 to 300 K under pulsed operation ͑0.5 s pulse width, 2 kHz repetition rate͒. 24 Thus, electroluminescence has been performed on both high and low QDD QD-laser guides at 110 K, 24 which is the lowest temperature that can be reached on our electroluminescence setup. At this temperature, k b T = 9 meV, so is much smaller than typical energy differences between our QDs states.…”

Section: A Laser Spectral Widthmentioning

confidence: 99%

Increase of charge-carrier redistribution efficiency in a laterally organized superlattice of coupled quantum dots

et al. 2006

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We report the observation of enhanced charge-carrier redistribution in laterally organized and coupled InAs/ InP quantum dots ͑QDs͒. We show that a periodic organization appears in the QD plane for a high in-plane QD density ͑QDD͒. This organization enhances the lateral coupling between the dots, which is evidenced by photoluminescence and magnetophotoluminescence experiments. Electronic inter-QD lateral coupling results in an improved charge-carrier distribution at low temperature, as shown by electroluminescence on high QDD QD lasers. We conclude that the inter-QD tunneling occurs via the tunneling of excited states through the wetting layer, and discuss the prospects of using coupled QDs for improving the quantum efficiency and dynamical properties of QD lasers.

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Section: A Laser Spectral Widthmentioning

confidence: 99%

Increase of charge-carrier redistribution efficiency in a laterally organized superlattice of coupled quantum dots

et al. 2006

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“…This substrate orientation is very attractive for laser applications because, in comparison with InAs dot formation on conventional (100) InP substrates, a higher density of dots having a smaller size dispersion has been achieved on (311)B InP substrates [65,66]. Indeed, room temperature lasers with low threshold current density emitting at 1.5 \xm were recently demonstrated [67]. In the analysed sample the growth temperature was set to 480°C.…”

Section: Capping With Lattice-matched Layersmentioning

confidence: 99%

“…Nevertheless, different materials such as InGaAs and GaAsSb are nowadays used to cap InAs/GaAs QDs in an effort to extend its emission wavelength to the technologically interesting 1.3-155 \xm region [59][60][61][62][63][64]. For InAs/ InP QDs, capping materials other than InP, like InGaAsP, have also successfully been used for laser applications [65][66][67].…”

Section: Capping With Different Materialsmentioning

confidence: 99%

InAs Quantum Dot Formation Studied at the Atomic Scale by Cross-sectional Scanning Tunnelling Microscopy

Ulloa

Offermans

Koenraad

2008

Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics

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Introduction Quantum dot formationSelf-assembled quantum dots (QDs) have attracted much attention in the last years [1,2]. These nanostructures are very interesting from a scientific point of view because they form nearly ideal zero-dimensional systems in which quantum confinement effects become very important. These unique properties also make them very interesting from a technological point of view. For example, InAs QDs are employed in QD lasers [3,4], single electron transistors [5], midinfrared detectors [6,7], single-photon sources [8,9], etc. InAs QDs are commonly created by the Stranski-Krastanov growth mode when InAs is deposited on a substrate with a bigger lattice constant, like GaAs or InP [10]. Above a certain critical thickness of InAs, three-dimensional islands are spontaneously formed on top of a wetting layer (WL) to reduce the strain energy. Once created, the QDs are subsequently capped, a step which is required for any device application.For any application based on InAs QDs, an accurate control of their electronic properties is required. The electron and hole states in the dot are very sensitive to the QD size, shape and composition (as well as to the surrounding material), and therefore an accurate control of the QD structural properties is necessary for applications. This explains the strong effort dedicated in the last years to the structural characterization of QDs [11], which is essential in order to have a deep understanding of the QD formation process. Although a lot of effort has been dedicated to study surface QDs, there are relatively few studies focused on the effect of the capping process [12][13][14][15][16][17][18][19][20]. Some of these studies have already shown significant differences in size, shape and composition between uncapped and capped QDs. For example, an important collapse of the QD height has been reported for InAs/GaAs QDs capped with GaAs [14,15,[17][18][19], revealing the big influence of the capping process on the structural properties of the QDs. Indeed, critical issues affecting the dot take place during capping like dot decomposition, intermixing, segregation, As/P exchange and composition modulation in the capping layer. This means that the real buried QDs must be studied in order to understand the complete QD formation process. Cross-sectional scanning tunnelling microscopy is an especially useful technique for this purpose, because it allows the structure of the capped dots at the atomic scale to be assessed. Cross-sectional scanning tunnelling microscopy (X-STM)The scanning tunnelling microscope is part of the family of scanning probe microscopes, which are able to provide direct real space information of a physical property at the atomic scale. This

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“…Recently, it has been demonstrated that the emission wavelength of these QDs can be tuned to the desired 1.5 lm wavelength region by using the double capping technique, 6,9 by growing a thin GaAs underlayer, 8 or very low V/III ratio and low growth temperature. 10,11 In this article, a different method to achieve 1.5 lm emission from InAs/InGaAsP/InP QDs by depositing a thin GaAs capping layer on top of the InAs QDs is presented and discussed.…”

mentioning

confidence: 99%

“…6 This structure was grown by gassource molecular beam epitaxy on a (113)B wafer. However, growth on exact (001) wafers with this epitaxial technique likely leads to formation of quantum dashes.…”

mentioning

confidence: 99%

Metal organic vapor-phase epitaxy of InAs/InGaAsP quantum dots for laser applications at 1.5 μm

Semenova

Kulkova

Kadkhodazadeh

et al. 2011

Applied Physics Letters

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The epitaxial growth of InAs/InGaAsP/InP quantum dots (QDs) for emission around 1.5 μm by depositing a thin layer of GaAs on top of the QDs is presented in this letter. The infuence of various growth parameters on the properties of the QDs, in particular, size, shape, chemical composition, and emission wavelength are investigated. Continuous wave lasing in ridge waveguide QD laser structures in the 1.5 μm wavelength range is demonstrated.

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High-gain and low-threshold InAs quantum-dot lasers on InP

Cited by 128 publications

References 15 publications

Increase of charge-carrier redistribution efficiency in a laterally organized superlattice of coupled quantum dots

Increase of charge-carrier redistribution efficiency in a laterally organized superlattice of coupled quantum dots

InAs Quantum Dot Formation Studied at the Atomic Scale by Cross-sectional Scanning Tunnelling Microscopy

Metal organic vapor-phase epitaxy of InAs/InGaAsP quantum dots for laser applications at 1.5 μm

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