Metal organic vapor-phase epitaxy of InAs/InGaAsP quantum dots for laser applications at 1.5 μm

Abstract

The epitaxial growth of InAs/InGaAsP/InP quantum dots (QDs) for emission around 1.5 μm by depositing a thin layer of GaAs on top of the QDs is presented in this letter. The infuence of various growth parameters on the properties of the QDs, in particular, size, shape, chemical composition, and emission wavelength are investigated. Continuous wave lasing in ridge waveguide QD laser structures in the 1.5 μm wavelength range is demonstrated.

Switching of the direction of reflectionless light propagation at exceptional points in non-PT-symmetric structures using phase-change materials

“…The refractive indices of aGST and cGST areñ aGST =4.7 + j0.2 andñ cGST =7 + j2, respectively, at λ 0 = 1.55µm [34,35]. In the presence of pumping, optical gain can be achieved using InGaAsP with InAs quantum dots (QDs) [53][54][55][56][57]. The real part of the refractive index for In x Ga 1−x As y P 1−y in the infrared is given by n = 3.1 + 0.46y [53,54], and is weakly dependent on the wavelength [53,54].…”

Высокая характеристическая температура лазера на квантовых точках InAs/GaAs/InGaAsP с длиной волны излучения около 1.5 мкм, синтезированного на подложке InP

“…подробности в работе [24]). Результаты исследования атомно-силовой микроскопии и сканирующей просвечивающей туннельной микроско-пии, показали, что поверхностная плотность КТ состав-ляет ∼ 4 · 10 10 см −2 в одном слое, а средние размеры КТ -31.5 ± 2 нм диаметр основания и 2.6 нм по высоте.…”

Thermal analysis of line-defect photonic crystal lasers

“…Alternatively, the epitaxial structure for the InGaAsP membrane based lasers were formed by depositing a 340 nm thick InGaAsP (λ g = 1.15 µm) layer on top of 1 µm sacrificial layers formed by a stack of 100 nm InP, 100 nm In 0.52 Al 0.48 As and 800 nm InP. Details about the growth and the results of the optical and morphological investigation of the QDs used in these membranes can be found in [19]. A detailed description of the fabrication of InGaAsP membrane based devices can be found in [9,20].…”