High-frequency acoustic charge transport in GaAs nanowires

Büyükköse, Serkan; Hernández-Mínguez, A.; Vratzov, B.; Somaschini, Claudio; Geelhaar, Lutz; Riechert, H.; Wiel, Wilfred G. van der; Santos, P. V.

doi:10.1088/0957-4484/25/13/135204

Cited by 70 publications

(22 citation statements)

References 20 publications

(25 reference statements)

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“…The carriers are usually photoexcited and are trapped by the strain field propagating in a controlled direction. Multiplexing the electronic signal on chip can be achieved by employing different surface acoustic waves [7,282]. Phonon-induced strain fields can also manipulate barrier heights in junctions and this effect has been demonstrated with Schottky barriers [283].…”

Section: Perspective and Applicationsmentioning

confidence: 99%

Nanophononics: state of the art and perspectives

et al. 2016

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Abstract. Understanding and controlling vibrations in condensed matter is emerging as an essential necessity both at fundamental level and for the development of a broad variety of technological applications. Intelligent design of the band structure and transport properties of phonons at the nanoscale and of their interactions with electrons and photons impact the efficiency of nanoelectronic systems and thermoelectric materials, permit the exploration of quantum phenomena with micro-and nanoscale resonators, and provide new tools for spectroscopy and imaging. In this colloquium we assess the state of the art of nanophononics, describing the recent achievements and the open challenges in nanoscale heat transport, coherent phonon generation and exploitation, and in nano-and optomechanics. We also underline the links among the diverse communities involved in the study of nanoscale phonons, pointing out the common goals and opportunities.

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Section: Perspective and Applicationsmentioning

confidence: 99%

Nanophononics: state of the art and perspectives

et al. 2016

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“…These concepts were built on schemes that have been previously established for planar semiconductor systems. Compared to all-electrical approaches, which typically require selective doping and sophisticated nanofabricated electrical contacts on individual NWs with sub-micrometer dimensions, the SAW-spectroscopy has proven to be a powerful contactless technique for: the control of acoustoelectrically induced conveyance of charge carriers and dissociated excitons across the NW [4][5][6][7], dynamic programing of NW QD occupancy state [8], precisely timed carrier injection into and extraction from NW QDs for low-jitter single photon emission [6,7], tuning of the NW QD radiative optical transitions by the oscillating strain and piezoelectric SAW fields [9,10], as well as coherent control of NW-based nanophotonic resonators [11]. Because the SAWs propagate at the speed of sound, their wavelengths in semiconductor heterostructures are typically in the micrometer and sub-micrometer range, thus covering acoustic frequencies from several tens of megahertz up to the gigahertz range.…”

Section: Introductionmentioning

confidence: 99%

Acoustically regulated optical emission dynamics from quantum dot-like emission centers in GaN/InGaN nanowire heterostructures

Lazić

Chernysheva

Hernández-Mínguez

et al. 2018

J. Phys. D: Appl. Phys.

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We report on experimental studies of the effects induced by surface acoustic waves on the optical emission dynamics of GaN/InGaN nanowire quantum dots. We employ stroboscopic optical excitation with either time-integrated or time-resolved photoluminescence detection. In the absence of the acoustic wave, the emission spectra reveal signatures originated from the recombination of neutral exciton and biexciton confined in the probed nanowire quantum dot. When the nanowire is perturbed by the propagating acoustic wave, the embedded quantum dot is periodically strained and its excitonic transitions are modulated by the acousto-mechanical coupling. Depending on the recombination lifetime of the involved optical transitions, we can resolve acoustically driven radiative processes over time scales defined by the acoustic cycle. At high acoustic amplitudes, we also observe distortions in the transmitted acoustic waveform, which are reflected in the time-dependent spectral response of our sensor quantum dot. In addition, the correlated intensity oscillations observed during temporal decay of the exciton and biexciton emission suggest an effect of the acoustic piezoelectric fields on the quantum dot charge population. The present results are relevant for the dynamic spectral and temporal control of photon emission in III-nitride semiconductor heterostructures.

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“…Radio frequency surface acoustic waves (SAWs) represent a particularly attractive and powerful tool to probe and dynamically control charge excitations in semiconductor heterostructure including Quantum Hall systems [12,13,14], charge transport in oneand two-dimensional electron channels [15,16], transport of charges [17,18,19], spins [20] or dipolar excitons [21] and precisely timed carrier injection into QDs for low-jitter single photon emission [22,23,24,25]. Recently, these concepts have been transferred to intrinsic nanowires (NWs) [26] and nanotubes [27] and NWs containing complex radial and axial heterostructures [28,29,30].…”

Section: Introductionmentioning

confidence: 99%

Radio frequency occupancy state control of a single nanowire quantum dot

Weiß¹,

Schülein²,

Kinzel³

et al. 2014

J. Phys. D: Appl. Phys.

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Abstract.The excitonic occupancy state of a single, nanowire-based, heterostructure quantum dot is dynamically programmed by a surface acoustic wave. The quantum dot is formed by an interface or thickness fluctuation of a GaAs QW embedded in a AlGaAs shell of a GaAs − AlGaAs core-shell nanowire. As we tune the time at which carriers are photogenerated during the acoustic cycle, we find pronounced intensity oscillations of neutral and negatively charged excitons. At high acoustic power levels these oscillations become anticorrelated which enables direct acoustic programming of the dot's charge configuration, emission intensity and emission wavelength. Numerical simulations confirm that the observed modulations arise from acoustically controlled modulations of the electron and electron-hole-pair concentrations at the position of the quantum dot.

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High-frequency acoustic charge transport in GaAs nanowires

Cited by 70 publications

References 20 publications

Nanophononics: state of the art and perspectives

Nanophononics: state of the art and perspectives

Acoustically regulated optical emission dynamics from quantum dot-like emission centers in GaN/InGaN nanowire heterostructures

Radio frequency occupancy state control of a single nanowire quantum dot

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