High efficiency operation of 6-H SiC MESFETs at 6 GHz

Sriram, S.; Barron, R.R.; Morse, A.W.; Smith, T.J.; Augustine, G.; Burk, Albert A.; Clarke, R.C.; Glass, R. C.; Hobgood, H. McD.; Orphanos, P.A.; Siergiej, R.R.; Brandt, C.D.; Driver, M.C.; Hopkins, R.H.

doi:10.1109/drc.1995.496290

Cited by 12 publications

(2 citation statements)

References 2 publications

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“…A 4H-SiC MESFET with an f max of 42 GHz has been reported [2], indicating that these devices should be capable of producing excellent RF performance to X band and potentially upto K band.…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Scalability of 4H-SiC MESFETs for High Frequency Applications

Rorsman

Nilsson

Eriksson

et al. 2004

MSF

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This paper presents an investigation of the scalability of 4H SiC MESFETs for high frequency applications by gate length reduction. SiC MESFETs with different gate lengths (0.50, 0.35 and 0.25 µm) and gate types (block-and Γ-gates) were processed on the same wafer. The gate width of these cevices ranged from 100 to 400 µm.The MESFET structure uses a thin highly doped p-buffer to improve the output conductance and decrease the short channel effect of the MESFET. This resulted in a 20% and 25% increase in extrinsic f T and f max , and a 12% increase in output power density.

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“…A 4H-SiC MESFET with an f max of 42 GHz has been reported [2], indicating that these devices should be capable of producing excellent RF performance to X band and potentially upto K band.…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Scalability of 4H-SiC MESFETs for High Frequency Applications

Rorsman

Nilsson

Eriksson

et al. 2004

MSF

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“…SiC is expected to be an attractive candidate for the application of high-frequency and high-power devices due to its superior electrical, chemical and thermal properties. 4H-SiC MESFET, especially, has many advantages benefiting from the merits of 4H-SiC [1,2]. However, there is much to be desired in applying typical recess-etched gate structure to SiC because recess dry etching of the gate region degrades the Schottky characteristics [3].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Characterization of 4H-SiC Planar MESFET Using Ion- Implantation

Kim

Jung

et al. 2004

MSF

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4H-SiC planar MESFETs having submicron-gate length were fabricated using ion-implantation and their DC and RF performances were characterized. The ion-implantation process which is essential to fabricate a planar device was investigated. Activation annealing after ion-implantation was performed in induction heating system under Ar atmosphere and the annealing condition was optimized. The fabricated MESFET showed good contact properties and pinch-off characteristics. The possibility of application of planar MESFETs in high voltage operation was suggested.

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