Investigation of the Scalability of 4H-SiC MESFETs for High Frequency Applications

Rorsman, Niklas; Nilsson, Per Åke; Eriksson, Joakim; Andersson, Kristoffer; Zirath, Herbert

doi:10.4028/www.scientific.net/msf.457-460.1229

Cited by 8 publications

(3 citation statements)

References 5 publications

(6 reference statements)

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“…The channel and cap layers are n-doped (N D = 2.7 · 10 17 and 1.6 · 10 19 cm −3 ) with thicknesses of 0.34 and 0.33 µm, respectively. Details of the process have been described previously [8]. In short, the process includes mesa etching for channel definition and device isolation, Ni contacts, Ti/Pt/Au gates, Au pads, passivation, air bridges, and an optional via-hole grounding step.…”

Section: Device Fabricationmentioning

confidence: 99%

Fabrication and characterization of field-plated buried-gate SiC MESFETs

Andersson

Sudow

Nilsson

et al. 2006

IEEE Electron Device Lett.

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Silicon carbide (SiC) MESFETs were fabricated using a standard SiC MESFET structure with the application of the "buried-channel" and field-plate (FP) techniques in the process. FPs combined with a buried-gate are shown to be favorable concerning output power density and power-added efficiency (PAE), due to higher breakdown voltage and decreased output conductance. A very high power density of 7.8 W/mm was measured on-wafer at 3 GHz for a two-finger 400-µm gate periphery SiC MESFET. The PAE for this device was 70% at class AB bias. Two-tone measurements at 3 GHz ± 100 kHz indicate an optimum FP length for high linearity operation.Index Terms-Buried-gate, field-plate (FP), microwave power, silicon carbide (SiC) MESFET.

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Section: Device Fabricationmentioning

confidence: 99%

Fabrication and characterization of field-plated buried-gate SiC MESFETs

Andersson

Sudow

Nilsson

et al. 2006

IEEE Electron Device Lett.

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“…The process is based on the Chalmers SiC MESFET technology [6] to which Schottky diodes, MIM capacitors, spiral inductors, and TaN TFRs have been added. The MESFETs and Schottky diodes are based on epi-design and do not require any subsequent implantation or epi-regrowth.…”

Section: Technologymentioning

confidence: 99%

A highly linear double balanced Schottky diode S-band mixer

Sudow

Andersson

Nilsson

et al. 2006

IEEE Microw. Wireless Compon. Lett.

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A high-level double balanced SiC Schottky diode mixer in SiC monolithic mirowave integrated circuit (MMIC) technology has been designed, processed and characterized. The mixer is a single ended in-and output circuit with coupled transformers as baluns to enable a compact design, resulting in a total area of 2.2 2.2 mm 2 .The mixer has a maximum IIP 3 of 38 dBm and IIP 2 of 58 dBm at 3.3 GHz, and a typical 1 dB of 23 dBm in the -band. The minimum conversion loss was 12 dBm at 2.4 GHz.The high power operation of the mixer shows that SiC MMIC can perform well in high microwave radiation environments.Index Terms-High linearity, -band, Schottky, SiC monolithic microwave integrated circuit (MMIC).

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“…The transconductance of the device is shown in Figure 4. The maximum transconductance is g m = 14 mS/mm at V g = 22 V. Typical transconductance in SiC MESFETs is >30 mS/mm [7]. The transconductance can be increased by reducing the oxide thickness.…”

Section: Silicon Carbide and Related Materials 2005mentioning

confidence: 99%

High Power-Density 4H-SiC RF MOSFETs

Gudjonsson

Allerstam

Ólafsson

et al. 2006

MSF

Self Cite

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We have made a 4H-SiC RF power MOSFETs with cutoff frequency up to 12 GHz, delivering RF power of 1.9 W/mm at 3 GHz. The transistors withstand 200 V drain voltage, are normally-off, and show no gate lag, which is often encountered in SiC MESFETs. The measured devices have a single drain finger and a double gate finger and a total gate width of 0.8 mm. To our knowledge this is the first time that power densities above 1 W/mm at 3 GHz are reported for SiC MOSFETs.

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Investigation of the Scalability of 4H-SiC MESFETs for High Frequency Applications

Cited by 8 publications

References 5 publications

Fabrication and characterization of field-plated buried-gate SiC MESFETs

Fabrication and characterization of field-plated buried-gate SiC MESFETs

A highly linear double balanced Schottky diode S-band mixer

High Power-Density 4H-SiC RF MOSFETs

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