Silicon carbide high-power devices

Weitzel, C.E.; Palmour, John W.; Carter, C.H.; Moore, Karen; Nordquist, Kevin J.; Allen, Scott T.; Thero, C.; Bhatnagar, M.

doi:10.1109/16.536819

Cited by 405 publications

(166 citation statements)

References 33 publications

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“…Silicon carbide (SiC) is the most suitable semiconductor material for fabricating devices that are used in highpower, high-frequency and chemically corrosive environments [1]. Ion-implantation is the only practical selective area doping technique available for making these devices [2,3], since diffusion coefficients of the technologically relevant dopants in SiC are very low even at temperatures as high as 1800°C.…”

Section: Introductionmentioning

confidence: 99%

Solid-state microwave annealing of ion-implanted 4H–SiC

Sundaresan¹,

Tian²,

Ridgway³

et al. 2007

Nuclear Instruments and Methods in Physics Research Section B:

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Section: Introductionmentioning

confidence: 99%

Solid-state microwave annealing of ion-implanted 4H–SiC

Sundaresan¹,

Tian²,

Ridgway³

et al. 2007

Nuclear Instruments and Methods in Physics Research Section B:

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“…Additional attractive features of SiC, which are presently utilized in rf devices operating in hostile and high-temperature (> 1000 C) environments [20], are its robustness to heat loading and its high electrical breakdown (DC threshold $300 MV=m). High-quality SiC films can be grown on silicon [21] and other substrates [22] that are subsequently machined into a prismlike shape for coupling infrared radiation into and out of the structure, as shown in Fig.…”

Section: Materials Properties Of Silicon Carbidementioning

confidence: 99%

Prism-coupled surface wave accelerator based on silicon carbide

Neuner

Korobkin

Ferro

et al. 2012

Phys. Rev. ST Accel. Beams

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A compact, solid-state accelerating structure based on surface waves is proposed and experimentally characterized. The structure, consisting of two SiC layers epitaxially grown on Si slabs and separated from each other by a subwavelength acceleration channel, is shown to support both longitudinal (accelerating) and transverse (deflecting) surface modes. Both modes are experimentally excited and characterized by performing angle-resolved spectroscopy with a wavelength-tunable carbon dioxide laser. Phase velocities of superluminous and subluminous modes are experimentally demonstrated, paving the way for tabletop charged particle acceleration. The same structure can be used for optical characterization of ultrashort electron bunches that generate longitudinal and transverse Cherenkov radiation.

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“…1,2 The hot wall, horizontal chemical vapor deposition (CVD) method is the most studied and best suited technique for growing the epitaxial layers which serve as the active region in all electronic SiC devices. 3 The demands on the layers differ substantially between different applications, e.g.…”

Section: Introductionmentioning

confidence: 99%

Incorporation of dopants in epitaxial SiC layers grown with fluorinated CVD chemistry

Stenberg

Janzén

Pedersen

2017

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Fluorinated chemistry in chemical vapor deposition (CVD) of silicon carbide (SiC) with SiF4 as Si precursor has been shown to fully eliminate the formation of silicon clusters in the gas phase, making SiF4 an interesting Si precursor. However, before a fluorinated CVD chemistry can be adopted, the effect of fluorine on the dopant incorporation must be understood since dopant incorporation is of paramount importance in semiconductor manufacturing. Here, the authors present dopant incorporation studies for n-type doping with N using N2 and p-type doping with Al using TMAl in fluorinated CVD of homoepitaxial SiC. The precursors used were SiF4 as Si precursor and the source of F together with CH4 as C precursor. The authors find that it is possible to control the doping in SiC epitaxial layers when using a fluorinated CVD chemistry for both n- and p-type materials using the C/Si ratio as in standard SiC CVD. However, large area doping uniformity seems to be a challenge for a fluorinated CVD chemistry, most likely due to the very strong Si–F and Al–F bonds.

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Silicon carbide high-power devices

Cited by 405 publications

References 33 publications

Solid-state microwave annealing of ion-implanted 4H–SiC

Solid-state microwave annealing of ion-implanted 4H–SiC

Prism-coupled surface wave accelerator based on silicon carbide

Incorporation of dopants in epitaxial SiC layers grown with fluorinated CVD chemistry

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