The wave nature of light limits the spatial resolution in classical microscopy to about half of the illumination wavelength. Recently, a new approach capable of achieving subwavelength spatial resolution, called superlensing, was invented, challenging the already established method of scanning near-field optical microscopy (SNOM). We combine the advantages of both techniques and demonstrate a novel imaging system where the objects no longer need to be in close proximity to a near-field probe, allowing for optical near-field microscopy of subsurface objects at sub-wavelength-scale lateral resolution.
Topological phase transitions in condensed matter systems give rise to exotic states of matter such as topological insulators, superconductors, and superfluids. Photonic topological systems open a whole new realm of research and technological opportunities, exhibiting a number of important distinctions from their condensed matter counterparts. Photonic modes can leak into free space, which makes it possible to probe topological photonic phases by spectroscopic means via Fano resonances. Based on this idea, we develop a technique to retrieve the topological properties of all-dielectric metasurfaces from the measured far-field scattering characteristics. Collected angle-resolved spectra provide the momentum-dependent frequencies and lifetimes of the photonic modes that enable the retrieval of the effective Hamiltonian and extraction of the topological invariant. Our results demonstrate how the topological states of open non-Hermitian systems can be explored via far-field measurements, thus paving a way to the design of metasurfaces with unique scattering characteristics controlled via topological effects.
We observe critical coupling to surface phonon-polaritons in silicon carbide by attenuated total reflection of mid-IR radiation. Reflectance measurements demonstrate critical coupling by a double scan of wavelength and incidence angle. Critical coupling occurs when prism coupling loss is equal to losses in silicon carbide and the substrate, resulting in maximal electric field enhancement.
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