High Doping Performance of Sulfur and Zinc Dopants in Tunnel Diodes Using Hydride Vapor Phase Epitaxy

Doping of β‐Ga2O3 Layers by Zn Using Halide Vapor‐Phase Epitaxy Process

“…This is a different way of doping in the HVPE process, as commonly, metalorganic compounds are used as precursors for metal dopant, for example, dimethylzinc for Zn. [34] Our way for doping is preferable because we can avoid undesirable incorporation of carbon in the layers.…”

Luminescence effects on subcell current–voltage analysis in InGaP/GaAs tandem solar cells

“…The fabrication process followed the method described in previous papers. [17][18][19]24 All samples were grown on a 2-in. diameter GaAs (001) substrate that was miscut 4 deg toward the (111)B direction in the custom hot-wall reactor (Taiyo Nippon Sanso, H260) at atmospheric pressure.…”

“…HVPE utilizes cost-effective group-III metals such as gallium and indium and offers high growth rates of several hundred μm∕h, which reduces manufacturing cost. InGaP and GaAs single-junction solar cells 17,18 and an InGaP/GaAs tandem solar cell 19 have been demonstrated in previous work. To improve the performance of multijunction solar cells, it is necessary to know the basic characteristics of individual subcells, such as the short-circuit current density (J sc ) and open-circuit voltage (V oc ).…”

Elimination of interlayer Schottky barrier in borophene/C4N4 vdW heterojunctions via Li-ion adsorption for tunneling photodiodes

“…Different from the Schottky barrier, electrons and holes can be effectively separated with less energy loss in the tunneling barrier, thus generating photoelectric conversion. [58][59][60] Generally, the tunneling barrier height is dependent on the asymmetry of the heterojunction and can be evaluated by the Hartree difference potential (dV H ). 61,62 Herein, dV H is calculated from the electron difference density as:…”